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Spectroscopic Investigation of Arsenic-Induced Surface Defects in High-Dose As+ Implanted Rapid Thermal Annealed Silicon

Published online by Cambridge University Press:  28 February 2011

S.N. Kumar ,
G. Chaussemy ,
P. Roura  and
A. Laugier
S.N. Kumar
Affiliation:
Laboratoire de Physique de la Matière, U.A. CNRS N° 358 Institut National des Sciences Appliqudes de Lyon 20 Av. A Einstein, F-69621 Villeurbanne Cedex, France
G. Chaussemy
Affiliation:
Laboratoire de Physique de la Matière, U.A. CNRS N° 358 Institut National des Sciences Appliqudes de Lyon 20 Av. A Einstein, F-69621 Villeurbanne Cedex, France
P. Roura
Affiliation:
Laboratoire de Physique de la Matière, U.A. CNRS N° 358 Institut National des Sciences Appliqudes de Lyon 20 Av. A Einstein, F-69621 Villeurbanne Cedex, France
A. Laugier
Affiliation:
Laboratoire de Physique de la Matière, U.A. CNRS N° 358 Institut National des Sciences Appliqudes de Lyon 20 Av. A Einstein, F-69621 Villeurbanne Cedex, France
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Abstract

Techniques of low-temperature photoluminescence, Auger electron spectroscopy, and X-ray photoelectron spectroscopy are used to study the residual defects remaining after the rapid thermal annealing of ion-implantation induced damage in As+ implanted (100) silicon. Rapid thermal annealing resulted in the electrical activation of a major portion of arsenic in the implanted zone, but a shallow region confined within a depth of =200 Å from the surface contained As complexed with Si and O atoms. Surface characterization results agree with the observed degradation in transport properties of the diodes constructed on the shallow N+/P As+ implanted B doped p-Si wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 215
Copyright
Copyright © Materials Research Society 1989

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References

1. Tamura, M., Horiuchi, M., Ito, T., and Abe, T., Appl. Phys. Lett. 52, 1212 (1988).Google Scholar
2. Cass, T.R. and Reddi, V.G.K., Appl. Phys. Lett. 23, 268 (1973).CrossRefGoogle Scholar
3. Hirao, T., Inoue, K., Takayanagi, S., Yaegashi, Y., Appl. Phys. Lett. 31, 505 (1977).CrossRefGoogle Scholar
4. Tamura, M., Natsuaki, N., Miyao, M., Tokuyama, T., in Proceedings of the 5th Internat. conference on Ion Implantation in Semiconductors and Other Materials. Boulder, (Plenum, New York 1977) p. 391.Google Scholar
5. Chaussemy, G., Canut, B., Kumar, S.N., Barbier, D., and Laugier, A. in Fundamentals of Beam-Solid Interactions and Transient Thermal Procesine, edited by Aziz, M.J., Rehn, L.E., and Stritzker, B. (Mater. Res. Soc. Proc. 100, Pittsburgh, PA 1988) pp. 695–700.Google Scholar
6. Kumar, S.N., Chaussemy, G., Canut, B., Barbier, D., and Laugier, A. in Proc. Europ. Mater. Res. Soc., Strasbourg, 1988, Photon. Beam and Plasma Assisted Processing Fundamentals and Technology, (Appl. Surf. Science, in press).Google Scholar
7. Chaussemy, G., Canut, B., Barbier, D., Remram, M., Joly, J.F., Pivot, J., and Laugier, A., in Proc. Europ. Mater. Res. Soc., Strasbourg, June 1987 (Les Editions Physique, XV, Paris 1987) p. 545.Google Scholar
8. Joly, J.F., Mayet, L., Remram, M., Chaussemy, G., Barbier, D., and Laugier, A., in seventh Europ. Photovoltaic Solar Energy Conf., Sevilla, Spain (Reidel, 1987) p. 933.CrossRefGoogle Scholar
9. Chaussemy, G., Kumar, S.N., Canut, B., Barbier, D., and Laugier, A., unpublished.Google Scholar
10. Thewalt, M.L.W., Can. J. Phys. 55, 1463 (1977).CrossRefGoogle Scholar
11. Suezawa, M. and Sumino, K., Phys. Status Solidi A 78, 639 (1983).CrossRefGoogle Scholar
12. Sauer, R., Weber, J., Stoltz, J., Weber, E.R., Kusters, K. H-., and Alexander, H., Appl. Phys A 36, 1 (1985).CrossRefGoogle Scholar
13. Lukes, F., Surf. Sci. 30, 91 (1972).CrossRefGoogle Scholar
14. Wagner, C.D., Riggs, W.M., Davis, L.E. and Moulder, J.F., Handbook of X-ray Photoelectron Spectroscopy. Ed. Muilenberg, G.E. (Perkin-Elmer, Eden Prairie, MN 1979).Google Scholar
15. Davis, L.E., MacDonald, N.C., Palmberg, P.W., Riach, G.E., and Weber, R.E., Handbook of Auger Electron Spectroscopy, edited by Muilenberg, G.E. (Perkin Elmer, Eden Prairie, MN 1979).Google Scholar
16. Banholzer, W.F. and Burrel, M.C., Surf. Sci. 176, 125 (1986).CrossRefGoogle Scholar
17. Hollinger, G. and Himpsel, F.J., Appl. Phys. Lett. 44, 93 (1984).CrossRefGoogle Scholar