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Spectroscopic Ellipsometry Characterisation of Thin Film Polysilicon

  • S. Lynch (a1), L. Spinelli (a1), M. Sherlock (a1), J. Barrett (a1) and G.M. Crean (a1)...

Abstract

Phase modulated Spectroscopic Ellipsometry (SE), in the spectral range from 1.5eV to 4.6eV, was employed to characterise thin film polysilicon (poly-Si) deposited by Low Pressure Chemical Vapour Deposition (LPCVD) on SiO2/Si(100) substrates as a function of process parameters. The LPCVD deposition temperature was varied from 550°C to 620°C for silane pressures ranging from 100mTorr to 230mTorr. A variation in poly-Si microstructure was observed as a function of film depth. The influence of deposition conditions on poly-Si surface morphology was quantified using both atomic force microscopy (AFM) and SE. An increase in the measured Raman TO phonon amplitude was observed for the 620°C sample set as a function of increasing LPCVD process pressure.

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Spectroscopic Ellipsometry Characterisation of Thin Film Polysilicon

  • S. Lynch (a1), L. Spinelli (a1), M. Sherlock (a1), J. Barrett (a1) and G.M. Crean (a1)...

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