Skip to main content Accessibility help
×
Home

Spectroscopic and Structural Studies of Some Precursors for the Deposition of PZT and Related Materials by MOCVD

  • Kirsty A. Fleeting (a1), Tony C. Jones (a1), Tim Leedham (a2), M. Azad Malik (a1), Paul O'brien (a1) and David J. Otway (a1)...

Abstract

MOCVD is a useful method for the deposition of thin films of lead zirconium titanate, PZT, because of its good step coverage and control of composition. Results are herein presented on a number of novel compounds which are potential MOCVD precursors. The compounds studied include Pb(tmhd)2, Zr(OBu')4 and Ti(OPr')4. Another commonly utilized precursor Zr(tmhd)4, is not ideal, in that it is a high melting point solid, and hence requires high substrate temperatures. We have sought to modify Zr precursors through chemical methods and have synthesized a number of novel, more volatile, and less intrinsically thermally stable MOCVD precursors. Full chemical characterization of the Zr precursors (NMR, IR, MS, CHN, TGA/DSC, Single Crystal X-ray diffraction) has been undertaken. We also present structural results on some related lead precursors.

Copyright

References

Hide All
1. Sotome, Y., Senzaki, J., Morita, S.-I., Tanimoto, S., Hirai, T., Ueno, T., Kuroiwa, K. and Tarui, Y., Jpn. J. Appl. Phys., 33, p.4066 (1994).
2. Lee, S.-S. and Kim, H.-G., J. Elect. Mat, 24, p. 1023 (1995).
3. Hase, T., Sakuma, T., Miyasaka, Y., Hirata, K. and Hosokawa, N., Jpn. J. Appl. Phys., 32, p. 4061 (1993).
4. Foster, C. M., Bai, G-R., Csencsits, R., Vetrame, J., Jammy, R., Wells, L. A., Carr, E., and Amano, J., J. Appl. Phys., 81, p. 2349 (1997).
5. Shiosaki, T., Fujimoto, M., Shimizu, M., Fkagawa, M. and Nakaya, K., Int. Ferroelect., 5, p. 39 (1994).
6. Kim, D., Kim, T.-Y., Lee, J. K., Tao, W. and Desu, S. B., Mat. Res. Soc. Symp. Proc., 433, p. 213 (1996).
7. Shimizu, M., Hyodo, S., Fujisawa, H., Niu, H. and Shiosaki, T., Mat. Res. Soc. Symp. Proc., 433, p. 201 (1996).
8. Hirai, T., Teramoto, K., Goto, T. and Tarai, Y., Jpn. J. Appl. Phys., 34, p. 539 (1995).
9. Scott, J. F. and Paz de Araujo, C. A., Science, 246, P.1400 (1989).
10. Moazzami, R., Manier, P. D., Jones, R. E. Jr, Campbell, A. C. and Mogato, C. J., VLSI Technology Symposium Digest, p. 87 (1993).
11. Larsen, P. K., Cuppens, R. and Spierings, G. A. C. M., Ferroelect, 128, p.265 (1992).
12. Taylor, D. J., Larsen, P. K., Dormane, G. J. M. and De Veirman, A. E. M., Int. Ferroelect, 7, p. 123 (1995).
13. Lee, S.-S. and Kim, H.-G., J. Elect. Mat., 24, p. 1023 (1995).
14. Lee, J.-J. and Dey, S. K., Ceram. Trans. (Ferroelectric Thin Films), 25, p. 235 (1992).
15. Tao, W., Desu, S. B., and Li, T. K., Mat. Lett., 23, p. 177 (1995).
16. Jones, A. C., Leedham, T. J., Wright, P., Crosbie, M. J., Lane, P. A., and Williams, D., these proceedings.
17. Jones, A. C., Leedham, T. J., Wright, P. J., Crosbie, M. J., Lane, P. A., Williams, D., Fleeting, K. A., Otway, D. J. and O'Brien, P., Adv. Mater., Chem. Vap. Dep., accepted for publication (1997).
18. Malik, M. A., Motevalli, M. and O'Brien, P., J. Chem. Soc, Chem. Commua, p. 1257 (1992).

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed