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Spatially and Temporally Resolved Reflectivity Profiles of Crystalline Silicon Irradiated by 48 Ps Pulses of One-Micron Laser Radiation

  • Steven C. Moss (a1), Ian W. Boyd (a1), Thomas F. Boggess (a1) and Arthur L. Smirl (a1)

Abstract

Time-resolved reflectivity measurements have been performed on single-crystal silicon irradiated by intense 48 ps pulses of 1 micron radiation. The temporal evolution of the spatial profile of the laser-induced reflectivity changes has been monitored using spatial correlation and surface imaging techniques. These measurements resolve apparent discrepancies between previous spatially and temporally averaged measurements at this wavelength and similar measurements in the visible.

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6. Boyd, I. W., Moss, S. C., Boggess, T. F., Smirl, A. L., Appl. Phys. Lett., to be published.

Spatially and Temporally Resolved Reflectivity Profiles of Crystalline Silicon Irradiated by 48 Ps Pulses of One-Micron Laser Radiation

  • Steven C. Moss (a1), Ian W. Boyd (a1), Thomas F. Boggess (a1) and Arthur L. Smirl (a1)

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