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Spatial Inhomogeneities of the Luminescence and Electrical Properties of Mbe Grown GaAs on Si

Published online by Cambridge University Press:  28 February 2011

G.A. Reid ,
K. Nauka ,
S.J. Rosner ,
S.M. Koch  and
J.S. Harris Jr.
G.A. Reid
Affiliation:
Hewlett-Packard, P.O.Box 10350, Palo Alto, CA 94304
K. Nauka
Affiliation:
Hewlett-Packard, P.O.Box 10350, Palo Alto, CA 94304
S.J. Rosner
Affiliation:
Hewlett-Packard, P.O.Box 10350, Palo Alto, CA 94304
S.M. Koch
Affiliation:
Stanford Electronics Lab, Stanford University, CA 94305
J.S. Harris Jr.
Affiliation:
Stanford Electronics Lab, Stanford University, CA 94305
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Abstract

Spatial homogeneity of the luminescence and electrical properties of gallium arsenide films grown directly on silicon substrates (GaAs/Si) by molecular beam epitaxy (MBE) have been investigated with microscopic scanning photoluminescence (PL), cathodoluminescence (CL), electron beam induced current (EBIC), and scanning deep level transient spectroscopy (SDLTS). It was found that GaAs/Si exhibits a highly nonuniform lateral distribution of speckled appearance in CL and PL images. These centers are also responsible for short minority carrier lifetimes as determined by EBIC. The observed nonuniformities appear to be a fundamental material property which is not altered by post-growth annealing. Correlations between the luminescence and electrical inhomogeneities and structural defects will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 227
Copyright
Copyright © Materials Research Society 1988

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