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Spatial Distribution of Luminescent Centers in Organometallic Vapor Phase Epitaxy Grown ZnxCdl−xSe/InP (001)

Published online by Cambridge University Press:  10 February 2011

X. B. Zhang  and
S. K. Hark
X. B. Zhang
Affiliation:
Department of physics, The Chinese University of Hong Kong, Shatin, Hong Kong
S. K. Hark
Affiliation:
Department of physics, The Chinese University of Hong Kong, Shatin, Hong Kong
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Abstract

Zincblende ZnxCdl−xSe alloys were grown on (001) InP by organometallic vapor phase epitaxy (OMVPE) using various VI / H precursor flow ratios, ranging from 0.95 to 12, at a temperature of 420°C. Spatial distribution of luminescent centers in the epilayer was characterized by cathodoluminescence (CL) spectroscopy and imaging. Both near band-gap (NBE) and deep level (DLE) emissions were observed in the spectra, with the width of the NBE peak increases with the VI / II flow ratio. Monochromatic CL images showed that the broadening of the NBE peak has its origin in the spatial inhomogeneity of the luminescent centers of the epilayer. Extended defects responsible for the DLE was only found in pyramidal hillocks seen in the CL images. The density of these defects was found to increase with the VI / I1 flow ratio.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 535: Symposium D/I – III-V and IV-IV Materials & Processing Challenges for Highly… , 1998 , 83
Copyright
Copyright © Materials Research Society 1999

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