Skip to main content Accessibility help
×
Home

Space Distribution of Deep Levels in SiGe/Si Heterostructure

  • Zhang Rong (a1), Yang Kai (a1), Gu Shulin (a1), Shi Yi (a1), Huang Hongbin (a1), Wang Ronghua (a1), Han Ping (a1), Hu Liqun (a1), Zheng Youdou (a1) and Li Qi (a1)...

Abstract

The small-pulse DLTS had been developed to measure distribution of deep levels in CVD grown SiGe/Si heterostructure before and after thermal processing at 800°C. Changes of defect states was found and after processing the original single deep level 0.62eV under the condition band split into two separated traps. A new weak deeper trap signal was found only in the just relaxed region. It could be Ge-related defect complex with misfit dislocations.

Copyright

References

Hide All
1. Patton, G.L., Comfort, J.H., Meyerson, B.S., Crabbe, E.F., Scilla, G.J., Fresart, E.D., Stork, J.M.C., Shen, J.Y.C., Harame, D.L., Burchartz, J.N., IEEE Electron Device Lett., 11, 171 (1990).
2. Konig, U.etal., Electronics Lett., 27(16),1405(1991), ibid, 28(2), 160(1992)
3. Lin, T.L. and Maserjian, J.,Appl.Phys.Lett., 57, 1423 (1990).
4. Tsaur, B.Y., Chen, C.K. andMarino, S.A.,IEEE Electron Device Lett., 12, 293 (1991).
5. Soref, R. A., Namavar, F. and Lorenzo, J., Optics Lett., 15, 270 (1990).
6. Mi, Q., Xiao, X., Sturm, J.C., Lenchyshyn, L.C. and Thewalt, M.L.W., Appl.Phys.Lett.,60, 3177 (1992).
7. Eadeas, Wendwll D. and Swanson, Richard M, J.Appl.Phys.,56, 1774(1984)
8. Zhang, R. et al. , Appl. Surf. Sci., 48/49, 356 (1991).
9. Nagesh, V., Grimmeiss, H.G., Heliqvist, E.L., Ljutovich, K.L. andLjutovich, A.S.,Semicond.Sci.Technol.,5, 556 (1990).

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed