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Space Charge Modelling in Solid Dielectrics under High Electric Field Based on Double Charge Injection Model

  • George Chen (a1) and Su Han Loi (a2)

Abstract

Present study aims to develop a clear insight on factors that influence space charge dynamics in solid dielectrics through a numerical simulation. The model used for the simulation is proposed by Alison and Hill [1] which describes charge dynamics as a result of bipolar transport with single level trapping. In this model, a constant mobility and no detrapping have been assumed. The simulation results show that carrier mobility, trapping coefficient and Schottky barrier have a significant effect on the space charge dynamics. Many features of space charge profiles observed by experiments have been revealed in despite of over simplistic model. More importantly, the simulation allows us to study the role of each individual parameter in the formation of space charge in solid dielectrics, so that the experimental results can be better understood.

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References

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1. Alison, J. M. and Hill, R. M. J. Phys. D: Appl. Phys. 27 1291–9 (1994).
2. Lampert, M. A. and Mark, P., “Current injections in solids”, (NY, London, 1970).
3. Mott, N. F. and Davis, E. A., “Electronic processes in non-crystalline materials”, (Clarendon Press, Oxford, 2nd Ed, 1978).
4. Fukuma, M., Nagao, M. and Kosaki, M. Proc. 4th Int. Conf.on Properties and Applications of Dielectric Materials (Brisbane) 24–7 (1994)
5. Kaneko, K., Suzuoki, Y. and Mizutani, T., IEEE Trans.Dielctr. Electr. Insul. 6 152–8 (1999).
6. Le Roy, S., Segur, P., Teyssedre, G. and Laurant, C., J. Phys. D: Appl. Phys. 37 298305 (2004).
7. Kao, K. C., Hwang, W., “Electrical Transport in Solids”, (Pergamon Press, 1981).
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Keywords

Space Charge Modelling in Solid Dielectrics under High Electric Field Based on Double Charge Injection Model

  • George Chen (a1) and Su Han Loi (a2)

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