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Some Recent Developments in Industrial Ion Implanters

  • Geoff Ryding (a1)

Abstract

semiconductor doping. This paper surveys some of the equipment developed at Eaton Corporation in response to the proliferation of ion implanted devices. Developments in both high current (~10mA) and medium current (~1mA) implanters will be discussed.

The evolution of dedicated equipment for the production of buried oxide layers (silicon on insulator technology) will also be reviewed.

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1. Ryding, G., Springer Series in Electrophysics 10, (1982) 319
2. Rose, P.H., Faretra, R. and Ryding, G., Proceedings of 5th International Conference on Ion Implantation Equipment and Techniques, Smugglers Notch, Vermont, North-Holland (1984)
3. Robertson, G.I., J. Electrochem. Soc. 122, (1975) 796
4. Ryding, G., Nucl. Instr. and Meth. 189, (1981) 239
5. Ryding, G. and Armstrong, A., Nucl. Instr. and Meth. 189 (1981) 319
6. Armstrong, A., Benveniste, V., Farley, M. and Ryding, G., Springer Series in Electrophysics 11 (1983) 155
7. Ryding, G. and Farley, M., Nucl. Instr. and Meth. 189 (1981) 295
8. Ryding, G., Springer Series in Electrophysics 11 (1983) 274
9. Mack, M.E., Ryding, G., Douglas-Hamilton, D.H., Steeples, K., Farley, M., Gillis, V., White, N., Wittkower, A. and Lambracht, R., Proceedings of 5th International Conference on Ion Implantation Equipment and Techniques, Smugglers Notch, Vermont, North-Holland (1984)
10. Guerra, M., Benveniste, V., Ryding, G., Douglas-Hamilton, D.H., Reed, M., Gagne, G., Armstrong, A. and Mack, M., Proceedings of 5th International Conference on Ion Implantation Equipment and Techniques, Smugglers Notch, Vermont, North-Holland (1984)
11. Ruffell, J., et. al. To be Published

Some Recent Developments in Industrial Ion Implanters

  • Geoff Ryding (a1)

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