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Solute Trapping of Ge in Al

Published online by Cambridge University Press:  26 February 2011

Patrick M. Smith ,
Jeffrey A. West  and
Michael J. Aziz
Patrick M. Smith
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge MA 02138
Jeffrey A. West
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge MA 02138
Michael J. Aziz
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge MA 02138
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Abstract

Partitioning during rapid solidification of dilute Al-Ge alloys has been investigated. Implanted thin films of Al have been pulsed-laser melted to obtain solidification at velocities in the range of 0.01 m/s to 3.3 m/s, as measured by the transient conductance technique. Previous and subsequent Rutherford Backscattering depth profiling of the Ge solute in the Al alloys has been used to determine the nonequilibrium partition coefficient k. A significant degree of lateral film growth during solidification confines determination of k to the placing of an upper bound of 0.22 on k for solidification velocities in this range. We place a lower limit of 10m/s on the “diffusive velocity,” which locates the transition from solute paritioning to solute trapping in the Continuous Growth Model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 205: Symposium F – Kinetics of Phase Transformations , 1990 , 331
Copyright
Copyright © Materials Research Society 1992

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References

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