Skip to main content Accessibility help
×
Home

Solid-Phase Crystallization of Amorphous Si0.7Ge0.3/Si and Si/Si0.7Ge0.3 Bilayer Films on SiO2

  • Tae-Hoon Kim (a1), Myung-Kwan Ryu (a1), Jin-Won Kim (a1), Chang-Soo Kim (a2) and Ki-Bum Kim (a1)...

Abstract

We have investigated the solid phase crystallization of a-(Si/Si0.7Ge0.3) and a-(Si0.7Ge0.3/Si) bilayer films deposited on SiO2 for an annealing temperature of 550 °C. It was found that, in case of a-(Si0.7Ge0 3/Si), nucleation of crystalline phases occurred at the free surface, while in a-(Si/Si0.7Ge0.3) crystalline phase nucleated at Si0.7Ge0.3/SiO2 interface. The crystallization rate of an a-(Si0.7Ge0.3/Si) is much slower than that of an a-(Si/Si0.7Ge0.3) films. After full crystallization, poly-(Si0.7Ge0.3/Si) has many equiaxed grains and the defect density of the upper Si0.7Ge0.3 was much lower than that of lower Si0.7 Ge0.3 in a poly-(Si/Si0.7Ge0.3) film whose grain morphology was elliptical. The average grain size of poly-(Si0.7Ge0.3/Si) was ˜7 μm and this film had strong (111) preferential orientation, while poly-(Si/Si0.7Ge0.3) had weak (311) or random oriented grains with the average size of˜0.3 μm.

Copyright

References

Hide All
1. King, T.-J., Pfiester, J. R., and Saraswat, K. C., IEEE Electron Dev. Lett. EDL–12, 584 (1991).
2. Hwang, C. W., Ryu, M. K., Kimn, K. B., Lee, S. C., and Kim, C. S., J. Appl. Phys. 77, 3042 (1995).
3. Tang, A. J., Tsai, J. A., Reif, R, and King, T.-J, IEDM 95, 513 (1995).
4. Ryu, M. K., Kim, J. W., Kim, T. H, Kim, K. B., Hwang, C. W., Jpn. J. Appl. Phys. 34, L1031 (1995).
5. Kim, J. W., Ryu, M. K., Kim, K. B., Kim, S. J., J. Electrochem. Soc. 143, 363 (1996).
6. Hamilton, D. R. and Seidensticker, R. G., J. Appl. Phys. 31, 1165 (1960).
7. Drosd, R. and Washburn, J., J. Appl. Phys. 53, 397 (1982).
8. Nakamura, A., Emoto, F., Fujii, E., Yamamoto, A., Uemoto, Y., Senda, K., and Kano, G., J. Appl. Phys. 66, 4248 (1989).
9. Sakai, A., Ono, H., Ishida, K., Nini, T., and Tatsumi, T., Jpn. J. Appl. Phys. 30, L941 (1991).

Solid-Phase Crystallization of Amorphous Si0.7Ge0.3/Si and Si/Si0.7Ge0.3 Bilayer Films on SiO2

  • Tae-Hoon Kim (a1), Myung-Kwan Ryu (a1), Jin-Won Kim (a1), Chang-Soo Kim (a2) and Ki-Bum Kim (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed