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Solid-Liquid Interface Instability in the Energy-Beam Recrystallization of Silicon on Insulator

Published online by Cambridge University Press:  25 February 2011

El-Hang Lee
El-Hang Lee*
Affiliation:
Monsanto Electronic Materials Company, St. Peters, MO 63376Present address:AT&T Technologies, Engineering Research Center, P. O. Box 900, PrincetonNJ 08540
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Abstract

An attempt has been made to systematically sort out the characteristic modes of morphological transition in the energy beam recrystallized thin film silicon on insulating substrates, and to relate them to the mechanisms of solid-liquid interface stability breakdown. Stable to unstable breakdown modes include faceted, cellular, and dendritic configurations as well as transient and composite configurations thereof. These primary modes of breakdown then lead to the secondary modes of breakdown which constitute the sub-boundary formation. The mechanics of the primary (interface) breakdown and that of the secondary (sub-boundary) breakdown must be clearly differentiated in understanding the breakdown process. Constitutional supercooling and absolute supercooling models have been used to explain the various interface instabilities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 563
Copyright
Copyright © Materials Research Society 1985

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References

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