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Solid State Amorphization in Silicide—Forming Systems

  • L.J. Chen (a1), W.Y. Hsieh (a1), J.H. Lin (a1), T.L. Lee (a1), J.F. Chen (a1), J.M. Liang (a1) and M.H. Wang (a1)...

Abstract

Solid phase amorphization has been found to occur in all refractory metal and a number of rare—earth and platinum group metal thin film on silicon systems. For Ti/Si, Zr/Si, Hf/Si, V/Si, Nb/Si and Ta/Si systems, the growth of amorphous interlayer (a—interlayer) was found to follow a linear law in the initial stage. Si atom was found to be the dominant diffusing species in the solid phase amorphization in Ti/Si, Zr/Si and Hf/Si systems. For the Y/Si system, the stability of amorphous interlayer depends critically on the composition of the amorphous films.

Auto–correlation function analysis was utilized to determine the structure of the amorphous interlayers. HRTEM in conjunction with the fast Fourier transform were applied to determine the first nucleated crystalline phase. Simultaneous presence of multiphases was observed to occur in a number of refractory metal/Si systems. Interesting electrical properties of amorphous interlayers were found for Ti/Si, Zr/Si and Hf/Si systems.

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Solid State Amorphization in Silicide—Forming Systems

  • L.J. Chen (a1), W.Y. Hsieh (a1), J.H. Lin (a1), T.L. Lee (a1), J.F. Chen (a1), J.M. Liang (a1) and M.H. Wang (a1)...

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