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Solid Phase Epitaxy of Strained Si1−xGex Alloys Formed by Highdose Ion Implantation into <001> Silicon

Published online by Cambridge University Press:  21 February 2011

D. J. Howard ,
D. C. Paine  and
N. G. Stoffel
D. J. Howard
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
D. C. Paine
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
N. G. Stoffel
Affiliation:
Belcore, Redbank, New Jersey 07701
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Abstract

In this paper we propose a new method for the synthesis of Si1−xGex strained-layer alloys using high-dose ion implantation of 74Ge at 200 keV into a preamorphized <001> Si wafer followed by solid phase epitaxy (SPE). Cross-sectional TEM was performed on samples at various stages of regrowth which revealed the evolution of the amorphous/crystalline interface and the development of strain relieving defects during SPE. We report that stacking faults are kinetically favored during SPE of Si1−xGex but are energetically feasible only above a critical strain energy. We propose a model that is based on the well known Matthews and Blakeslee approach which predicts the onset of stacking faults during SPE of high-dose ion implant-synthesized Si1−xGex/Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 187: Symposium J – Thin Film Structures and Phase Stability , 1990 , 279
Copyright
Copyright © Materials Research Society 1990

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References

1. Patton, G.L., Iyer, S.S., Delage, S.L., Tiwari, S., Stork, J.M.C., IEEE ED Lett., 9(4), 165 (1988).Google Scholar
2. King, C.A., Hoyt, J.L., Gronet, C.M., Gibbons, J.F., Scott, M.P., and Turner, J., IEEE ED Lett., 10(2), 52 (1989).Google Scholar
3. Temkin, H., Antreasyan, A., Olsson, N.A., Pearsall, T.P., and Bean, J.C., Appl. Phys. Lett., 49(13), 809 (1986)Google Scholar
4. Patton, G.L., Comfort, J.H., Meyerson, B.S., Crabbe, E.F., Scilla, G.J., Fresart, E. De, Stork, J.C., Sun, J.Y.-C., Harame, D.L., and Burghartz, J.N., IEEE ED Lett., 11(4), 171 (1990).Google Scholar
5. Matthews, J.W., Epitaxial Growth, Matthews, J.W. ed., (Academic Press, 1974) p. 559.Google Scholar
6. Paine, D.C., Howard, D.J., Stoffel, N.G., and Horton, J.A., to be published in JMR, May (1990).Google Scholar
7. Freund, L.B., J. Appl. Mech., 54, 553 (1987).Google Scholar
8. Burenkov, A.F., Komarov, F.F., Kumakhov, M.A., and Temkin, M.M., Tables of Ion Implantation Spacial Distributions, (Gordon and Breach Science Publishers, 1986) p. 107.Google Scholar