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SOI Interface Structures in Selective Epitaxial Growth

Published online by Cambridge University Press:  25 February 2011

Zara S. Weng ,
R. Gronsky ,
J. C. Lou  and
W. G. Oldham
Zara S. Weng
Affiliation:
Dept. of Materials Science and Mineral Engineering, University of California Berkeley, and the National Center for Electron Microscopy, Lawrence Berkeley Laboratory, Berkeley, CA
R. Gronsky
Affiliation:
Dept. of Materials Science and Mineral Engineering, University of California Berkeley, and the National Center for Electron Microscopy, Lawrence Berkeley Laboratory, Berkeley, CA
J. C. Lou
Affiliation:
Dept. of Electrical Engineering and Computer Science, University of California Berkeley, Berkeley, CA
W. G. Oldham
Affiliation:
Dept. of Electrical Engineering and Computer Science, University of California Berkeley, Berkeley, CA
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Abstract

Silicon-on-insulator structures were formed by the selective epitaxial growth (SEG) of silicon and the epitaxial lateral overgrowth (ELO) of oxide shapes using an LPCVD hot-walled reactor at 850°C. The homoepitaxial interface changed character with modifications of the gas composition during the in-situ pre-epitaxial bake at 900°C. HREM images show ellipsoid-shaped inclusions lying along the homoepitaxial interface for silicon growth conducted with no dichlorosilane (DCS) flow during the prebake in H2. SIMS analysis indicates a large oxygen, fluorine, and carbon concentration at the interface. For structures grown with a small DCS flow in addition to H2 during the prebake, the homoepitaxial structural defects and the oxygen, fluorine, and carbon peaks are removed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 707
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Kurten, H., Voss, H.J., Kim, W., and Engel, W.L., IEEE Trans, on Elec. Dev., 30, 1511 (1983).Google Scholar
2. Jastrezbski, L., J. of Crystal Growth, 70, 253 (1984).Google Scholar
3. Pagliaro, R., Corboy, J.F., Jastrezbski, L., and Soydon, R., J. of Electrochem. Soc.: Sol. State Tech., 1235 (1987).Google Scholar
4. Rubloff, G.W., Mat. Res. Soc. Symp. Proc. Vol. 105, 11 (1988).Google Scholar
5. Ghidini, G. and Smith, F.W., J. of Electrochem. Soc.: Sol. State Tech., 2926 (1984).Google Scholar
6. Lou, J.C., Galewski, C., and Oldham, W., Appl. Phys. Lett., 58, 59 (1991).CrossRefGoogle Scholar
7. see for example Burmeister, J., J. of Crystal Growth, 11, 131 (1971).Google Scholar
8. see for example Yew, T.R. and Reif, R., J. Appl. Phys., 65, 2550 (1989).CrossRefGoogle Scholar
9. Hull, R., Bean, J.C., Gibson, J.M., Joy, D.C., and Twigg, M.E., Appl. Phys. Lett., 49, 1287 (1989).CrossRefGoogle Scholar
10. Sun, Y.K., Bonser, D.J., and Engel, T., Phys. Rev. B., 43, 14309 (1991).CrossRefGoogle Scholar