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Sn-H Complex in Hydrogen Pass Ivated GaAs

  • D. M. Kozuch (a1), Michael Stavola (a1), S. J. Pearton (a2), C. R. Abernathy (a2) and J. Lopata (a2)...

Abstract

It is confirmed that Sn donors in GaAs are passivated by exposure to a hydrogen plasma. The Sn-H complexes give rise to vibrational absorption bands at 1327.8 cm-1 and 967.7 cm-1 that are assigned to H-stretching and H-wagging modes respectively. A study of the thermal stability of the Sn-H complexes shows that they dissociate for annealing temperatures above ~150°C. The properties of the Sn-H complexes are compared to those of other donor-H complexes. Our results suggest a configuration for the complex with H at the antibonding site adjacent to the Sn.

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Sn-H Complex in Hydrogen Pass Ivated GaAs

  • D. M. Kozuch (a1), Michael Stavola (a1), S. J. Pearton (a2), C. R. Abernathy (a2) and J. Lopata (a2)...

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