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Smoothing Effects of MOCVD Grown GaAs/AlxGa1−xAs Superlattices 1

  • Xian-gang Xu (a1), Bai-biao Huang (a1), Shi-wen Liu (a1), Hong-wen Ren (a1) and Min-hua Jiang (a1)...


GaAs/AlxGa1-xAs (x=0.5, 0.6, 1.0) superlattices used as buffer layers in HEMT devices have been grown by Metalorganic Chemical Vapor Deposition (MOCVD) at. atmospheric pressure, and characterized by cross-sectional transmission electron microscopy (XTEM). The initial stage of nucleation on the substrates has been clearly verified by examining the undulations of a 30na GaAs layer sandwiched between the substrate and the superlattice. Both Alo.5Gao.5As/GaAs and AlAs/GaAs superlattices can smooth out interface roughness caused by contaminations and dislocations on the substrate surface. The mechanism of smoothing effect has been discussed in detail.



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Work supported by the National Natural Science Foundation of China.



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