Skip to main content Accessibility help
×
Home

Smoothing Effects of MOCVD Grown GaAs/AlxGa1−xAs Superlattices 1

  • Xian-gang Xu (a1), Bai-biao Huang (a1), Shi-wen Liu (a1), Hong-wen Ren (a1) and Min-hua Jiang (a1)...

Abstract

GaAs/AlxGa1-xAs (x=0.5, 0.6, 1.0) superlattices used as buffer layers in HEMT devices have been grown by Metalorganic Chemical Vapor Deposition (MOCVD) at. atmospheric pressure, and characterized by cross-sectional transmission electron microscopy (XTEM). The initial stage of nucleation on the substrates has been clearly verified by examining the undulations of a 30na GaAs layer sandwiched between the substrate and the superlattice. Both Alo.5Gao.5As/GaAs and AlAs/GaAs superlattices can smooth out interface roughness caused by contaminations and dislocations on the substrate surface. The mechanism of smoothing effect has been discussed in detail.

Copyright

Footnotes

Hide All
1

Work supported by the National Natural Science Foundation of China.

Footnotes

References

Hide All
[1] Stringfellow, G.B., Organometallic Vapor-Phase Epitaxy: Theory and Practice, (Academic prese, Boston, 1989), 1.
[2] Weisbuch, C., Semiconductors and Semimetals, edited by Dingle, R., Vol. 24, (Academic press, London, 1987), 1.
[3] Tsang, W.T., Seniconductors and Semimetals, edited by Dingle, R., Vol. 24, (Academic press, London, 1987), 397.
[4] Mimura, T., Hiyamizu, S., Fujii, T., and Nanbu, K., Jpn. J. Appl. Phys., 19 L225, (1980).
[5] Miller, D.A.B., Optics & Photonics News, Feb., 8, (1990)
[6] Packeiser, G., Tews, H. and Zwicknagl, P., J. Crystal Growth, 107, 637, (1991).
[7] Levine, B.F., Malik, R.J., Walker, J., Choi, K.K., Bethea, C.G., Kleinman, D.A., and Vandberg, J.W., Appl. Phys. Lett., 53, 296, (1988).
[8] Lakner, H., Bollig, B., Kubalek, E., Heuken, M., Heime, K., Scheffer, F., and Guimarâes, F.E.G., J. Crystal Growth, 107, 452, (1991).
[9] Heuken, M., Loreck, L., Ploog, K., Schlapp, H., and Weimann, G., IEEE Trans. Electron. Devices, ED–33, 693, (1986)
[10] Gowers, U.P., Thin Film Growth Techniques for Low-Dimensional Structures, edited by Farrow, R.F.C. et al., (NATO ASI Series B: vol. 163, Plenum press, New York, 1987), 471.
[11] Baibiao, Huang et al., Research & progress of S.E.E (in Chinese), 10, 666, (1990)
[12] Ando, S. and Fukui, T., J. Crystal Growth, 98, 646, (1989).
[13] Leys, M.R., van Opdorp, C., Viegers, M.P.A., and Talen-van der Mheen, H.J., J. Crystal Growth, 68, 431, (1984).
[14] Tiwen, Fan, Chinese J. semiconductors, 9, 211, (1988).
[15] Kuesters, K.H., Cooean, B.C.De., Shealy, J.R., and Carter, C.B., J. Crystal Growth, 71, 514, (1985).
[16] Nilson, S., Van Gieson, E., Arent, D.J., Meier, H.P., Walter, W. and Forster, T., Appl. Phys. Lett., 55, 972, (1989).
[17] Asai, H., J. Crystal Growth, 80, 425, (1987).
[18] Hersee, S.D., Barbier, E., and Bloudeau, R., J. Crystal Growth, 77, 310, (1986).

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed