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Small “Magnetic” Clusters of Ga and In with As and V

Published online by Cambridge University Press:  01 February 2011

Liudmila A. Pozhar
Affiliation:
Western Kentucky University, Department of Chemistry, TCCW 444, 1 Big Red Way, Bowling Green, KY 42101, U.S.A.
Alan T. Yeates
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, Polymer Materials Branch (AFRL/MLBP), 2941 Hobson Way, Wright-Patterson Air Force Base, OH 45433, U.S.A.
Frank Szmulowicz
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, Sensor Materials Branch (AFRL/MLPS), 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433, U.S.A.
William C. Mitchel
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, Sensor Materials Branch (AFRL/MLPS), 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433, U.S.A.
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Abstract

Several small clusters of Ga and In with As and V atoms are pre-designed to study effects of spatial constraints on electronic and magnetic properties of such clusters by means of the Hartree-Fock (HF) method. The obtained electronic energy level structures (ELSs), optical transition energies (OTEs) and spin densities of these clusters are compared to those specific to the corresponding clusters nucleated without spatial constraints. The pre-designed indium-based clusters demonstrate the enhanced spin densities as compared to those of the gallium-based clusters with equal numbers of V atoms, and thus can be of interest for applications in spintronic and magneto-optic memory materials development.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

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