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Slurry Retention and Transport during Chemical-Mechanical Polishing of Copper

Published online by Cambridge University Press:  18 March 2011

Anurag Jindal ,
Ying Li ,
Satish Narayanan  and
S. V. Babu
Anurag Jindal
Affiliation:
Departments of Chemical1 and Mechanical 2 Engineering Center For Advanced Materials Processing Clarkson University, Potsdam, NY 13699
Ying Li
Affiliation:
Departments of Chemical1 and Mechanical 2 Engineering Center For Advanced Materials Processing Clarkson University, Potsdam, NY 13699
Satish Narayanan
Affiliation:
Departments of Chemical1 and Mechanical 2 Engineering Center For Advanced Materials Processing Clarkson University, Potsdam, NY 13699
S. V. Babu
Affiliation:
Departments of Chemical1 and Mechanical 2 Engineering Center For Advanced Materials Processing Clarkson University, Potsdam, NY 13699
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Abstract

This work investigates the retention and transport of chemical species and abrasive particles during chemical-mechanical polishing (CMP) of copper (Cu). “Slurry step-flow” experiments, in which the concentrations of the chemicals and abrasives in the slurry are altered in steps during polishing were conducted with hydrogen peroxide (H2O2)/glycine based slurries. Two different pads, Suba-500 and IC 1400 (with k grooves), were compared in terms of their slurry retention and transport characteristics. With these experiments, it has been shown that both the abrasives and chemicals are constantly replaced during a typical CMP process. Better polishing performance of the IC 1400 over Suba 500 is a result of improved transport of the chemicals and the abrasives between the wafer/pad interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 671: Symposium M – Chemical-Mechanical Polishing 2001–Advances and Future Challenges , 2001 , M40.1
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Bibby, T.F.A., Adams, J.A., Holland, K., Krilik, G.A. and Parikh, P.. Thin Solid Films, 308–309 (1997) p.538–542.10.1016/S0040-6090(97)00496-3Google Scholar
2. Subramanian, R. S., Zhang, L., and Babu, S.V., J. Electrochem. Soc., 146 (11), (1999) pp.4263–4272.10.1149/1.1392626Google Scholar
3. Coppeta, J., Rogers, C., Philipossian, A., and Kaufman, F.B., Proc. VMIC Conference, Santa Clara, (1997).Google Scholar
4. Philipossian, A., Rogers, C., and Lu, J., Proc.CMP Users Group Meeting, Santa Clara, CA, October 11, (2001)Google Scholar
5. Runnels, S.R., and Eyman, L.M., J. Electrochem. Soc., 141 (6), (1994), p. 1698 Google Scholar
6. Li, Y., Jindal, A., and Babu, S. V., Proc. The Electrochemical Society 198th Meeting, Phoenix, AZ, October 22–27, (2000)Google Scholar