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Si/SiC UHV Direct Wafer Bonded Interface Structure
Published online by Cambridge University Press: 15 March 2011
Abstract
Planar (001)Si/(0001) Si-terminated 6H-SiC interfaces were synthesized by UHV diffusion bonding of cleaned, on-axis and vicinal wafers at 1100°C for 5 hours, at MPa pressure. The interfaces were crystalline up to their defining plane, without nanospectroscopically detectable impurities. The crack opening tests showed the interfaces were stronger than the Si substrates. Oxygen on the substrate surfaces resulted in silicon carbide on insulator (SiCOI) interface formation.
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- Copyright © Materials Research Society 2000
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