Skip to main content Accessibility help
×
Home

Single-Shot Excimer-Laser Crystallization of an Ultra-Large Si Thin-Film Disk

  • Mitsuru Nakata (a1), Chang-Ho Oh (a1) and Masakiyo Matsumura (a1)

Abstract

An excimer-laser-induced large-grain growth method has been proposed which utilizes non-uniform heat diffusion along the Si thin-film and also along the underlayer. A single-shot of KrF excimer-laser light pulse with uniform intensity could crystallize a circularly pre-patterned Si thin-film of 20νm in diameter, much larger than TFT feature size in present AM-LCD panels.

Copyright

References

Hide All
1. Ishihara, R. and Matsumura, M., Jpn. J. Appl. Phys., 36, p. 6167 (1997)
2. Crowder, M. A., Carey, P. G., Smith, P. M., Sposili, R. S., Cho, H. S., and Im, J. S., IEEE ED. Lett., 19 (8), p. 306 (1998)
3. Matsumura, M., Phys. Stat. Sol. (a) 166, p. 715 (1998)
4. Oh, C. H., Ozawa, M. and Matsumura, M., Jpn. J. Appl. Phys., 37, p. L492 (1998)
5. Oh, C. H. and Matsumura, M., Jpn. J. Appl. Phys., 37, p. 5474 (1998)
6. Matsumura, M. and Oh, C. H., Thin Solid Films, 337, p. 123 (1999)
7. Ozawa, M., Oh, C. H. and Matsumura, M., Jpn. J. Appl. Phys., 38, p. 5700 (1999)

Single-Shot Excimer-Laser Crystallization of an Ultra-Large Si Thin-Film Disk

  • Mitsuru Nakata (a1), Chang-Ho Oh (a1) and Masakiyo Matsumura (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed