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Single-Shot Excimer Laser Annealing and In Process Ellipsometry Analysis for Ultra Shallow Junctions

Published online by Cambridge University Press:  01 February 2011

T. Noguchi ,
G. Kerrien ,
T. Sarnet ,
D. Débarre ,
J. Boulmer ,
D. Zahorski ,
M. Hernandez ,
C. Defranoux ,
C. Laviron  and
M.N. Semeria
T. Noguchi
Affiliation:
Institut d'Electronique Fondamentale (IEF), UMR CNRS 8622, Université Paris-Sud, Bât. 220, 91405 ORSAY Cedex, France
G. Kerrien
Affiliation:
Institut d'Electronique Fondamentale (IEF), UMR CNRS 8622, Université Paris-Sud, Bât. 220, 91405 ORSAY Cedex, France
T. Sarnet
Affiliation:
Institut d'Electronique Fondamentale (IEF), UMR CNRS 8622, Université Paris-Sud, Bât. 220, 91405 ORSAY Cedex, France
D. Débarre
Affiliation:
Institut d'Electronique Fondamentale (IEF), UMR CNRS 8622, Université Paris-Sud, Bât. 220, 91405 ORSAY Cedex, France
J. Boulmer
Affiliation:
Institut d'Electronique Fondamentale (IEF), UMR CNRS 8622, Université Paris-Sud, Bât. 220, 91405 ORSAY Cedex, France
D. Zahorski
Affiliation:
Sopra Sa, 26, rue Pierre Joigneaux, 92270 Bois-Colombes, France
M. Hernandez
Affiliation:
Sopra Sa, 26, rue Pierre Joigneaux, 92270 Bois-Colombes, France
C. Defranoux
Affiliation:
Sopra Sa, 26, rue Pierre Joigneaux, 92270 Bois-Colombes, France
C. Laviron
Affiliation:
CEA-DRT/LETI/DTS, 17 Avenue des Martyrs 38054 Grenoble Cedex 9, France
M.N. Semeria
Affiliation:
CEA-DRT/LETI/DTS, 17 Avenue des Martyrs 38054 Grenoble Cedex 9, France
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Abstract

Single-shot Excimer Laser Annealing (ELA) was performed onto Si surface that was previously B+ implanted with or without Ge+ pre-amorphization. As a result, p+ type USJ (Ultra-Shallow Junction) has been formed. In process analysis, using Infrared Spectroscopic Ellipsometry (IR-SE) has been performed and compared with conventional 4-point probe method. Also, the corresponding crystallinity for the USJ of Si surface has been studied using Ultraviolet-Visible (UV-Vis) Spectroscopic Ellipsometry. In the case of pre-amorphization by Ge+ implantation, the laser energy density threshold required for melting the surface, and therefore for electrical activation, decreased drastically because of the difference in the thermodynamic properties of the amorphized Si. Estimation of the junction depth shows a shallower junction when using UV-SE, as compared to IR-SE. This can be explained by the fact that, in the UV range, the crystallinity of the top layer is predominant while IR-SE is more sensitive to dopant activation. This efficient single-shot ELA is a candidate for the USJ formation for sub-0.1 νm CMOS transistors. The effective method for investigating the activation state related to the crystallinity by using UV-SE and IR-SE is expected to apply as a non-contact analytical tool for USJ formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 717: Symposium C – Si Front-End Junction Formation Technologies , 2002 , C1.8
Copyright
Copyright © Materials Research Society 2002

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References

1. Sai-Halaz, G., Wordeman, M., Kern, D., Ganin, E., Rishton, S., Ng, H.. Zicherman, D., Moy, D., Chang, T. and Dennard, R., Tech. Digest of IEDM, 397, (1987).Google Scholar
2. Lenoble, D., Halimaoui, A., Kermarrec, O., Campidelli, Y., Bensahel, D., Bounnovierr, J., Menut, O., Robiliart, E., Perrin, E., Arnaud, F., Boeuf, F., Stotniki, T., Grouilet, A., and Bignel, G., presented at International Workshop on Junction Technologies, Tokyo, Japan, p. 2–2, (2001).Google Scholar
3. Yoo, W. S., Fukada, T., Setokubo, T., Aizawa, K., Yamamoto, J. and Komatsubara, R., presented at International Workshop on Junction Technologies, Tokyo, Japan, p. 4–4, (2001).Google Scholar
4. Kramer, K.J., Talwar, S., McCarthy, A. M. and Weiner, K.H., IEEE Trans. Electron Dev. Lett. 17, 4561 (1996).Google Scholar
5. Débarre, D., Kerrien, G., Noguchi, T. and Boulmer, J., presented at IEICE transactions “Fundamentals/Commun.,/Electron., Inf. & Syst.” 8, (2001) (accepted for publication).Google Scholar
6. Kerrien, G., Boulmer, J., Débarre, D., Bouchier, D., Grouillet, A., and Lenoble, D., Applied Surface Science, 186, 45–51 (2002).Google Scholar
7. Moon, Jong Won, Han, Myung Geun and Lee, Seonghoon, presented at the 2002 MRS Spring Meeting, San Francisco, CA, 2002 (to be published).Google Scholar
8. Noguchi, T., Kubota, M., Yamamoto, H., Matsumoto, K. and Yamagishi, M., Tech. Report of IEICE, SDM2000-45 (2000).Google Scholar
9. Crowder, M.A., Caray, P.G., Smith, P.M., Sposili, R.S., H.S.Cho and Im, J.S., IEEE Trans. Elect. Dev. Lett. 19, 306 (1998).Google Scholar
10. Park, C., Kim, S.D., Wang, Y., Talwar, S. and C, J.. Woo, S., Symp. on VLSI Tech. Dig., 69 (2001).Google Scholar
11. Tsukamoto, H., Yamamoto, H., Noguchi, T. and Suzuki, T., Jpn. Appl. Phys. 32, L659 (1992).Google Scholar
12. Goto, K., Yamamoto, T., Kubo, T., Kase, M., Wang, Y., Lin, T., Talwar, S. and Sugii, T., Tech. Digest of IEDM, p. 931 (1999).Google Scholar
13. Boher, P., Bucchia, M., Piel, J. P., Defranoux, C., Stehle, J. L. and Pickering, C. in Optical Metrology Roadmap for the Semiconductor, Optical, and Data Stotage Industries II, edited by Duparre, A. and Singh, B., (SPIE Proc. 4449, 2001) pp 69–78.Google Scholar
14. Noguchi, T., Tsukamoto, H., Suzuki, T., and Masuya, H., Extended Abstracts of the Int. Conf. on SSDM, p. 620 (1991).Google Scholar
15. O Thompson, M., Galvin, G. J. and Mayer, J. W., Phys. Rev. Lett. 27, 375 (1975).Google Scholar
16. Laviron, C., Semeria, M. N., Zahorski, D., Stehle, M., Hernandez, M., Boulmer, J., Débarre, D., and Kerrien, G. presented at International Workshop on Junction Technologies, Tokyo, Japon, p. 6–1, (2001).Google Scholar