Skip to main content Accessibility help
×
Home

Single-Shot Excimer Laser Annealing and In Process Ellipsometry Analysis for Ultra Shallow Junctions

  • T. Noguchi (a1), G. Kerrien (a1), T. Sarnet (a1), D. Débarre (a1), J. Boulmer (a1), D. Zahorski (a2), M. Hernandez (a2), C. Defranoux (a2), C. Laviron (a3) and M.N. Semeria (a3)...

Abstract

Single-shot Excimer Laser Annealing (ELA) was performed onto Si surface that was previously B+ implanted with or without Ge+ pre-amorphization. As a result, p+ type USJ (Ultra-Shallow Junction) has been formed. In process analysis, using Infrared Spectroscopic Ellipsometry (IR-SE) has been performed and compared with conventional 4-point probe method. Also, the corresponding crystallinity for the USJ of Si surface has been studied using Ultraviolet-Visible (UV-Vis) Spectroscopic Ellipsometry. In the case of pre-amorphization by Ge+ implantation, the laser energy density threshold required for melting the surface, and therefore for electrical activation, decreased drastically because of the difference in the thermodynamic properties of the amorphized Si. Estimation of the junction depth shows a shallower junction when using UV-SE, as compared to IR-SE. This can be explained by the fact that, in the UV range, the crystallinity of the top layer is predominant while IR-SE is more sensitive to dopant activation. This efficient single-shot ELA is a candidate for the USJ formation for sub-0.1 νm CMOS transistors. The effective method for investigating the activation state related to the crystallinity by using UV-SE and IR-SE is expected to apply as a non-contact analytical tool for USJ formation.

Copyright

References

Hide All
1. Sai-Halaz, G., Wordeman, M., Kern, D., Ganin, E., Rishton, S., Ng, H.. Zicherman, D., Moy, D., Chang, T. and Dennard, R., Tech. Digest of IEDM, 397, (1987).
2. Lenoble, D., Halimaoui, A., Kermarrec, O., Campidelli, Y., Bensahel, D., Bounnovierr, J., Menut, O., Robiliart, E., Perrin, E., Arnaud, F., Boeuf, F., Stotniki, T., Grouilet, A., and Bignel, G., presented at International Workshop on Junction Technologies, Tokyo, Japan, p. 2–2, (2001).
3. Yoo, W. S., Fukada, T., Setokubo, T., Aizawa, K., Yamamoto, J. and Komatsubara, R., presented at International Workshop on Junction Technologies, Tokyo, Japan, p. 4–4, (2001).
4. Kramer, K.J., Talwar, S., McCarthy, A. M. and Weiner, K.H., IEEE Trans. Electron Dev. Lett. 17, 4561 (1996).
5. Débarre, D., Kerrien, G., Noguchi, T. and Boulmer, J., presented at IEICE transactions “Fundamentals/Commun.,/Electron., Inf. & Syst.” 8, (2001) (accepted for publication).
6. Kerrien, G., Boulmer, J., Débarre, D., Bouchier, D., Grouillet, A., and Lenoble, D., Applied Surface Science, 186, 4551 (2002).
7. Moon, Jong Won, Han, Myung Geun and Lee, Seonghoon, presented at the 2002 MRS Spring Meeting, San Francisco, CA, 2002 (to be published).
8. Noguchi, T., Kubota, M., Yamamoto, H., Matsumoto, K. and Yamagishi, M., Tech. Report of IEICE, SDM2000-45 (2000).
9. Crowder, M.A., Caray, P.G., Smith, P.M., Sposili, R.S., H.S.Cho and Im, J.S., IEEE Trans. Elect. Dev. Lett. 19, 306 (1998).
10. Park, C., Kim, S.D., Wang, Y., Talwar, S. and C, J.. Woo, S., Symp. on VLSI Tech. Dig., 69 (2001).
11. Tsukamoto, H., Yamamoto, H., Noguchi, T. and Suzuki, T., Jpn. Appl. Phys. 32, L659 (1992).
12. Goto, K., Yamamoto, T., Kubo, T., Kase, M., Wang, Y., Lin, T., Talwar, S. and Sugii, T., Tech. Digest of IEDM, p. 931 (1999).
13. Boher, P., Bucchia, M., Piel, J. P., Defranoux, C., Stehle, J. L. and Pickering, C. in Optical Metrology Roadmap for the Semiconductor, Optical, and Data Stotage Industries II, edited by Duparre, A. and Singh, B., (SPIE Proc. 4449, 2001) pp 6978.
14. Noguchi, T., Tsukamoto, H., Suzuki, T., and Masuya, H., Extended Abstracts of the Int. Conf. on SSDM, p. 620 (1991).
15. O Thompson, M., Galvin, G. J. and Mayer, J. W., Phys. Rev. Lett. 27, 375 (1975).
16. Laviron, C., Semeria, M. N., Zahorski, D., Stehle, M., Hernandez, M., Boulmer, J., Débarre, D., and Kerrien, G. presented at International Workshop on Junction Technologies, Tokyo, Japon, p. 6–1, (2001).

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed