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Single-Crystalline and Bamboo Al Lines Fabricated by Graphoepitaxy: Microstructure and 1/f Noise Measurements

Published online by Cambridge University Press:  15 February 2011

Marc J.C. Van Den Homberg ,
A. H. Verbruggen ,
P. F. A. Alkemade  and
S. Radelaar
Marc J.C. Van Den Homberg
Affiliation:
DIMES/NF, Faculty of Applied Physics, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, The Netherlands Email: homberg@dimes.tudelft.nl
A. H. Verbruggen
Affiliation:
DIMES/NF, Faculty of Applied Physics, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, The Netherlands
P. F. A. Alkemade
Affiliation:
DIMES/NF, Faculty of Applied Physics, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, The Netherlands
S. Radelaar
Affiliation:
DIMES/NF, Faculty of Applied Physics, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, The Netherlands
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Abstract

The continuing scaling-down of integrated circuits leads to increased metallization reliability problems, especially electromigration. We used 1/f noise measurements to study the relation between electromigration and microstructure. These measurements are very sensitive to the microstructural attributes, such as grain boundaries and dislocations. Al lines were grown by graphoepitaxy: First, a pure Al film was grown by dc magnetron sputtering on a groove pattern etched into a SiO2 substrate. The growth was then followed by an in situ rapid thermal anneal that resulted in a complete filling of the grooves with Al. These Al lines were carefully characterized with SEM and Backscatter Kikuchi Diffraction. Depending on the presence of a temperature gradient during the anneal, the lines were either nearly single-crystalline or bamboo with one grain per ∼ 3 μm. The resistivity was ∼ 2.8 μΩcm, only slightly higher than for bulk Al. We measured the 1/f noise with the two-channel ac technique at RT. We found in both bamboo as well as the single-crystalline lines a very low noise intensity; a factor two lower than in conventionally sputter deposited and annealed Al lines. No clear difference between the noise spectra of the bamboo and the single-crystalline lines was observed. We concluded that grain boundaries are not the only contributor to 1/f noise; other types of defects must play a role as well.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 127
Copyright
Copyright © Materials Research Society 1996

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