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Single Crystal Gd203 Films Epitaxially Grown on GaAs - A New Dielectric for GaAs Passivation

Published online by Cambridge University Press:  10 February 2011

M. Hong ,
J. Kwo ,
A. R. Kortan ,
J. P. Mannaerts ,
M. C. Wu ,
T. S. Lay  and
A. M. Sergent
M. Hong
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, mwh@lucent.com
J. Kwo
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, mwh@lucent.com
A. R. Kortan
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, mwh@lucent.com
J. P. Mannaerts
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, mwh@lucent.com
M. C. Wu
Affiliation:
Dept. of Electrical and Computer Eng., National Tsing-Hwa University, Hsin-Chu, Taiwan
T. S. Lay
Affiliation:
Inst. of Electro-Optical Eng., National Sun Yat-Sen University, Kaohsiung, Taiwan
A. M. Sergent
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, mwh@lucent.com
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Abstract

Single crystal Gd2O3 dielectric thin films were epitaxially grown on GaAs. The Gd2O3 film has a cubic structure isomorphic to Mn2O3, and is (110) oriented in single domain on the (100) GaAs surface. The oxide film has low leakage current densities ˜ 10–9 – 10–10 A/cmT2 at zero bias. Typical breakdown field is 4 MV/cm for an oxide film 185 Å thick, and >10 MV/cm for an oxide less than 50 Å thick. Both accumulation and inversion layers were observed in the Gd2O3-GaAs metal oxide semiconductor (MOS) diodes using capacitance-voltage (C-V) measurements, with an interfacial density of states around 1011 cm–2 eV–1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 535: Symposium D/I – III-V and IV-IV Materials & Processing Challenges for Highly… , 1998 , 151
Copyright
Copyright © Materials Research Society 1999

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References

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