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Single and Symmetric Double Two-Dimensional Hole Gases at Si/SiGe Heterojunctions Grown by Rapid Thermal Chemical Vapor Deposition

Published online by Cambridge University Press:  22 February 2011

V. Venkataraman  and
J. C. Sturm
V. Venkataraman
Affiliation:
Dept. of Electrical Engineering, Princeton University, Princeton, NJ 08544
J. C. Sturm
Affiliation:
Dept. of Electrical Engineering, Princeton University, Princeton, NJ 08544
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Abstract

Two dimensional hole gases have been investigated in Si/SiGe modulation doped heterostructures grown by RT-CVD for the first time. Single, both normal and inverted, and double heterostructures were studied. The results suggest that any asymmetry due to dopant segregation or autodoping between the normal and inverted structures occurs on a scale of less than 1 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 391
Copyright
Copyright © Materials Research Society 1991

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References

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