Hostname: page-component-76fb5796d-vfjqv Total loading time: 0 Render date: 2024-04-25T08:30:20.218Z Has data issue: false hasContentIssue false
  • English
  • Français

Simulations of molecular beam epitaxy growth of GaAs

Published online by Cambridge University Press:  17 March 2011

Z. Zhang  and
B. G. Orr
Z. Zhang
Affiliation:
Physics Department, The University of MichiganAnn Arbor, MI 48109-1120
B. G. Orr
Affiliation:
Physics Department, The University of MichiganAnn Arbor, MI 48109-1120
Get access

Abstract

Numerical simulations have been performed for generic III-V MBE growth. The key aspects of the simulation include two deposited species one volatile and the second with high surface mobility. Simulations reproduce the experimentally observed adatom concentrations for GaAs and show that smooth surfaces are produced for films deposited with a substrate temperature in a crossover regime between kinetically limited and entropically roughened growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 648: Symposium P – Growth, Evolution & Properties of Surfaces, Thin Films, and Self Organized Structure , 2000 , P5.3
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ghaisas, S. V., Madhukar, A., Phys. Rev. Lett. 56, 1066 (1986).Google Scholar
2. Clarke, S., Vvedensky, D. D., Phys. Rev. Lett. 58, 2235 (1987).Google Scholar
3. Sarma, S. Das, Tamborenea, P., Phys. Rev. Lett. 66, 325 (1991).Google Scholar
4. Johnson, M. D., et al. Phys. Rev. Lett. 72, 116–119 (1994).Google Scholar
5. Itoh, M., et al. Phys. Rev. Lett. 81, 633 (1998).Google Scholar
6. Weeks, J. D., Gilmer, G. H., Journal of Crystal Growth 43, 385–387 (1978).Google Scholar
7. Foxon, C. T., Joyce, B. A., Surf. Sci. 50, 434–450 (1975).Google Scholar
8. Tersoff, J., Johnson, M. D., Orr, B. G., Phys. Rev. Lett. 78, 282–286 (1997).Google Scholar
9. Neave, J. H., Joyce, B. A., Dobson, P. J., Norton, N., Appl. Phys. A 31, 1 (1983).Google Scholar
10. Tromp, R. M., Mankos, M., Phys. Rev. Lett. 81, 1050–1054 (1998).Google Scholar