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Simulation of Uniformity and Lifetime Effects in Collimated Sputtering

Published online by Cambridge University Press:  15 February 2011

R. N. Taita ,
S. K. Dewb ,
W. Tsaic ,
D. Hodul ,
M. J. Brett  and
T. Smy
R. N. Taita
Affiliation:
Alberta Microelectronic Centre, #318, 11315-87 Ave., Edmonton, AB, T6G 2T9, Canada
S. K. Dewb
Affiliation:
Department of Electrical Engineering, University of Alberta, Edmonton, AB, T6G 2G7, Canada
W. Tsaic
Affiliation:
Edward L. Ginzton Research Center, Varian Associates, Palo Alto, CA 94304, USA
D. Hodul
Affiliation:
Edward L. Ginzton Research Center, Varian Associates, Palo Alto, CA 94304, USA
M. J. Brett
Affiliation:
Department of Electrical Engineering, University of Alberta, Edmonton, AB, T6G 2G7, Canada
T. Smy
Affiliation:
Department of Electronics, Carleton University, Ottawa, ON, KIS 5B6, Canada
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Abstract

Collimated sputtering has been successful in providing good contact barriers for sub-half micron contacts with aspect ratios of 3 and greater. This approach does present drawbacks however, particularly in terms of reduced deposition rates and degraded film uniformity. The flux collected on the collimator leads to closing off of the cells, further reducing deposition rate on the wafer and limiting the life of the collimator. This paper demonstrates simulation of the filling of the collimator with different system configurations and pressures using the SIMSPUD vapor transport and SIMBAD thin film growth simulators. The model can determine collimator filling uniformity, blanket film uniformity, angular distribution of collimated sputter flux, and lifetime of the collimator. Given the target erosion profile, system geometry, and deposition rate, collimator lifetime can be predicted. The model indicates that for a 300 mm diameter source a drop in operating pressure from 0.67 Pa to 0.27 Pa has little effect on collimator life in terms of kWh, while increasing collimator life in terms of wafers by about 50%. The increase in the number of wafers processed comes at the expense of a small loss of uniformity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 387: Symposium P – Rapid Thermal and Integrated Processing IV , 1995 , 107
Copyright
Copyright © Materials Research Society 1995

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