Skip to main content Accessibility help
×
Home

Simulation of Steady State Leakage Current in Thin Films

  • Herbert Schroeder (a1), Sam Schmitz (a1) and Paul Meuffel (a1)

Abstract

Numerical simulation studies were performed in order to shed light on the controlling mechanism for the steady state leakage current through metal/insulator/metal capacitors with high permittivity dielectric or ferroelectric materials such as SrTiO3, (Ba,Sr)TiO3 or Pb (Zr,Ti)O3. As a model we used an extension of the combined injection-diffusion model, i.e. we have solved the Poisson and continuity equations inside the dielectric assuming thin, low permittivity (“dead”) layers at the electrode interfaces. As “new” boundary conditions we used injection / recombination terms at both electrodes, also taking into account the barrier lowering due to the coulomb mirror potential.

The simulation data are presented in dependence on several extrinsic and intrinsic parameters (voltage, temperature, film thickness, barrier height, dead layer properties, etc.) for symmetrical electrodes together with first results on asymmetrical ones. The most important result is that for nearly all parameter sets the leakage current is (film) bulk-limited, mostly due to the low carrier mobilities in these insulating materials. Only for very special conditions the interface-limited current, e.g. thermionic injection at the cathode for electrons, is a good approximation. The numerical data are compared to experimental true leakage current results on STO and BST.

Copyright

References

Hide All
[1] Dietz, G.W. et al., J. Appl. Phys. 82, 2359 (1997).
[2] Baniecki, J.D. et al., J. European Ceramic Soc. 19, 1457 (1999).
[3] Zhou, C. and Newns, D.W., J. Appl. Phys. 82, 3081 (1997).
[4] Natori, K., Otani, D., and Sano, N., Appl. Phys. Letters 73, 632 (1998)
[5] Basceri, C., Streiffer, S.K., Kingon, A.I. and Waser, R., J. Appl. Phys. 82, 2497 (1997).
[6] Ellerkmann, U., Liedtke, R., and Waser, R., Ferroelectrics 271, 315 (2002).
[7] Hwang, C.S., J. Appl. Phys. 92, 432 (2002).
[8] Black, C.T. and Welser, J.J., IEEE Trans. Electron Devices 46, 776 (1999).
[9] Dawber, M. and Scott, J.F., Jpn. J. Appl. Phys. 41, 6848 (2002).
[10] Kotecki, D.E. et al., IBM J. Res. Develop. 43, 367 (1999).
[11] Schroeder, H., Schmitz, S., and Meuffels, P., Appl. Phys. Letters 82, 781 (2003).
[12] Crowell, C.R. and Sze, S.M., Solid-State Electronics 9, 1035 (1966). See also:
Sze, S.M., Physics of Semiconductor Devices, (2nd ed., John Wiley & Sons, New York, 1981)
[13] Brumleve, T.R. and Buck, R.P., J. Electroanal. Chem. 90, 1 (1978).
[14] Schmitz, S., Thesis RWTH Aachen, 2002.
[15] Schroeder, H. and Schmitz, S., unpublished.
[16] Shin, J.C., Park, J., Hwang, C.S., and Kim, H.J., J. Appl. Phys. 86, 506 (1999).
[17] Fitsilis, F. et al., Integr. Ferroel. 38, 211 (2001).
[18] Takeshima, Y., Tanaka, K., and Sakabe, Y., Jpn. J. Apll. Phys. 39, 5389 (2000).
[19] Schroeder, H. and Schmitz, S., “Leakage current measurements in STO and BST thin films”, this volume

Simulation of Steady State Leakage Current in Thin Films

  • Herbert Schroeder (a1), Sam Schmitz (a1) and Paul Meuffel (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed