Skip to main content Accessibility help
×
Home

Simulation of Steady State and Transient Phenomena in a-Si:H Pin Structures and Films

  • Rudi Brüggemann (a1), Charles Main (a2) and Gottfried H. Bauer (a1)

Abstract

In this paper we report on a range of simulation studies. The transient photocur-rent decay after switching off of steady illumination is investigated and we show that the protracted decay in undegraded pin-solar cells is a hole current. In degraded pin samples a change of sign in the photocurrent during the decay is observed by simulation (as is experimentally) which is attributed to an electron diffusion current in reverse direction. We study the distribution of defects according to the defect pool model in a pin structure. The varying dangling bond density with position of the Fermi level leads to large inhomogeneities in defect density across the i-layer in thermal equilibrium leading to increased band bending and giving increased recombination close to the interfaces under illumination. As a demonstration of another application of the simulation method we show how the quasi-steady state is established in the steady state photocarrier grating experiment in lock-in technique.

Copyright

References

Hide All
[1] Kida, H., Hattori, K., Okamoto, H., Hamakawa, Y., J. Appl. Phys. 59, 4079 (1986).
[2] Wieczorek, H., PhD Thesis, Philipps-Universität Marburg, 1987.
[3] Wieczorek, H., Fuhs, W., Phys. Stat. Sol. 114, 413 (1989).
[4] Hack, M., Shaw, J.G. in Amorphous Silicon Technology edited by Madan, A., Hamakawa, Y., Thompson, M.J., Taylor, P.C., LeComber, P.G. (Mater. Res. Soc. Proc. 219, Pittsburgh, PA 1991) p. 315;
Shaw, J.G., Hack, M.G., LeComber, P.G., Willums, M., J. Non-Cryst. Solids 137 & 138, 1233 (1991).
[5] Schumm, G., Bauer, G.H., J. Non-Cryst. Solids 137 & 138, 315 (1991).
[6] Hughes, R.C., Sokel, R.J., J. Appl. Phys. 52, 6743 (1981);
Sokel, R., Hughes, R.C., J. Appl. Phys. 53, 7414 (1982).
[7] Main, C., Berkin, J., Merazga, A., Marshall, J.M., J. Non-Cryst. Solids 97 & 98, 779 (1987); C.
Russell, Main R., Berkin, J., Marshall, J.M., Phil. Mag. Lett. 55, 189 (1987).
[8] Shapiro, F.R., Bar-Yam, Y., J. Appl. Phys. 64, 2185 (1988).
[9] Main, C., Berkin, J., Merazga, A. in New Physical Problems in Electronic Materials, edited by Borissov, M., Kirov, N., Marshall, J.M., Vavrek, A. (World Scientific, Singapore, 1990), p. 55
[10] Brüggemann, R., Schumm, G., Main, C., Berkin, J., Bauer, G.H., J. Non-Cryst. Solids 137 & 138, 359 (1991).
[11] Kemp, M., IEEE Trans. ED 35, 1510 (1988).
[12] Schumm, G., Abel, C.-D., Bauer, G.H., J. Non-Cryst. Solids 137 & 138, 351 (1991).
[13] Pierz, K., PhD Thesis, Philipps-Universität Marburg, 1990.
[14] Rothwarf, A., Conf. Record 20th IEEE PVSC, Las Vegas, 1988, p. 166.
[15] Smith, Z.E., Wagner, S. in Amorphous Silicon and Related Materials, edited by Fritzsche, H. (World Scientific, Singapore, 1989), p. 409.
[16] Branz, H. M., Crandall, R. S., Solar Cells 9, 159 (1989)
[17] Schumm, G., Bauer, G.H. in Amorphous Silicon Technology-1990, edited by Taylor, P.C., Thompson, M.J., LeComber, P.G., Hamakawa, Y., Madan, A. (Mater. Res. Soc. Proc. 192, Pittsburgh, PA 1990) p. 189.
[18] Block, M., Bonnet, D., Zetzsche, F., Conf. Record 22nd IEEE PVSC, Las Vegas, 1991.
[19] Arch, J.K., Fonash, S.J., Appl. Phys. Lett. 60, 757 (1992).
[20] Abel, C.-D., Bauer, G.H., these proceedings.

Simulation of Steady State and Transient Phenomena in a-Si:H Pin Structures and Films

  • Rudi Brüggemann (a1), Charles Main (a2) and Gottfried H. Bauer (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed