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Simulation of Self-Heating and Temperature Effect in GaN-based Metal-Semiconductor Field-Effect Transistor

Published online by Cambridge University Press:  01 February 2011

Valentin O Turin  and
Alexander Balandin
Valentin O Turin
Affiliation:
touriv@rpi.edu, RPI, ECSE, CII 9015, 110 8th St, Troy, NY, 12180, United States, (518)-276-3058, (518)-276-2990
Alexander Balandin
Affiliation:
alexb@ee.ucr.edu, UCR, EE, United States
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Abstract

Two-dimensional electro-thermal simulations of GaN-based metal-semiconductor field-effect transistor are performed in the framework of the drift-diffusion model. The dependence of the hot spot temperature in transistors with many gates on the gate-to-gate pitch is studied. The case of SiC substrate is compared to the case of sapphire substrate. The ambient temperature effect on transistor performance is simulated. The specific of a thermal breakdown in GaN-based devices is discussed. The results obtained can be useful for the optimization of the thermal design for field-effect transistors.

Keywords

semiconductingdevicessimulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF13-05
Copyright
Copyright © Materials Research Society 2006

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References

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