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Simulation of Microposit 2400-17 Resist Profiles for 0.5μm Photolithography at 248 nm
Published online by Cambridge University Press: 25 February 2011
Abstract
Model parameters have been measured to characterize the exposure and development of Microposit 2400 resist exposed by a new deep UV wafer stepper at 248 nm. Resist profiles are obtained from the model for equal line/space patterns. The observed non-vertical wall profiles are correctly predicted by the simulation. These profiles result from the strong absorption of the resist and lack of photobleaching at 248 nm.
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