Hostname: page-component-cd9895bd7-gvvz8 Total loading time: 0 Render date: 2024-12-26T14:51:47.289Z Has data issue: false hasContentIssue false
  • English
  • Français

Simulation of Grazing-Incidence Synchrotron X-ray Topographic Images of Threading c+a Dislocations in 4H-SiC

Published online by Cambridge University Press:  28 May 2012

Fangzhen Wu ,
Shayan Byrappa ,
Huanhuan Wang ,
Yi Chen ,
Balaji Raghothamachar ,
Michael Dudley ,
Edward K. Sanchez ,
Gil Chung ,
Darren Hansen  and
Stephan G. Mueller
...Show all authors
Fangzhen Wu
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, New York, 11794, USA
Shayan Byrappa
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, New York, 11794, USA
Huanhuan Wang
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, New York, 11794, USA
Yi Chen
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, New York, 11794, USA
Balaji Raghothamachar
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, New York, 11794, USA
Michael Dudley*
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, New York, 11794, USA
Edward K. Sanchez*
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, 48686, USA
Gil Chung
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, 48686, USA
Darren Hansen
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, 48686, USA
Stephan G. Mueller
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, 48686, USA
Mark J. Loboda
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, 48686, USA
*
amdudley@notes.cc.sunysb.edu
bedward.sanchez@dowcorning.com
Get access

Abstract

Synchrotron X-ray topography (SXRT) of various geometries has been successfully utilized to image c+a dislocations in 4H-SiC crystals. Although molten potassium hydroxide(KOH) can be used to reveal the location of such dislocations, it is not possible to determine their senses or their Burgers vector magnitude. A simple, non-destructive method has been proposed to determine the Burgers vector of these c+a dislocations called the ray tracing simulation, which has been successfully implemented previously in revealing the dislocation sense and magnitude of micropipes, closed-core threading screw dislocations (TSDs) and threading edge dislocations (TEDs) in 4H-SiC. In this paper, grazing incidence topography is performed using the monochromatic beam for the horizontally cut wafers to record pyramidal reflections of 11-28 type. Ray tracing simulation has been successfully implemented to correlate the simulated images with experimental images which are discussed in the paper.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1433: Symposium H – Silicon Carbide 2012—Materials, Processing and Devices , 2012 , mrss12-1433-h02-04
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Wu, F., et al. ., ICSCRM 2011 (in press)Google Scholar
[2] Dudley, M., et al. ., Appl. Phys. Lett., vol. 98, 232110 (2011).Google Scholar
[3] Dudley, M., et al. ., Mater. Sci. Forum, vols. 679–680, pp. 269–272, (2011).Google Scholar
[4] Dudley, M., et al. ., Mater. Res. Soc. Symp. Proc., vol. 1246, 1246-B02-02 (2010).Google Scholar
[5] Chen, Y., et al. ., J. Electron. Mater., vol. 37, pp. 713–720 (2008)Google Scholar
[6] Kamat, I., et al. ., Mater. Sci. Forum, vols. 600–603, pp. 305–308, (2009).Google Scholar
[7] Huang, X. R., et al. ., Appl. Phys. Lett., vol. 91, 231903 (2007).Google Scholar
[8] Dudley, M., et al. ., J. Phys. D: Appl. Phys. 32 A139–A144 (1999).Google Scholar
[9] Huang, X. R., et al. ., J. Appl. Cryst., 32, 516–524 (1999).Google Scholar
[10] Bowen, D. K. and Tanner, B. K., in “High Resolution X-Ray Diffractometry and Topography”, Taylor & Francis, pp. 189 (1998).Google Scholar
[11] Hirth, J. P. and Lothe, J., in “Theory of Dislocations”, 2nd Ed., John Wiley & Sons Publication (1982)Google Scholar
[12] Eshelby, J. D. and Stroh, A. N., Phil. Mag. 42, 1401 (1951)Google Scholar