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Simulation of Focused Ion Beam Induced Damage Formation in Crystalline Silicon

Published online by Cambridge University Press:  01 February 2011

Gerhard Hobler ,
Alois Lugstein ,
Wolfgang Brezna  and
Emmerich Bertagnolli
Gerhard Hobler
Affiliation:
Vienna University of Technology, A-1040-Vienna, AUSTRIA. gerhard.hobler@tuwien.ac.at
Alois Lugstein
Affiliation:
Vienna University of Technology, A-1040-Vienna, AUSTRIA. gerhard.hobler@tuwien.ac.at
Wolfgang Brezna
Affiliation:
Vienna University of Technology, A-1040-Vienna, AUSTRIA. gerhard.hobler@tuwien.ac.at
Emmerich Bertagnolli
Affiliation:
Vienna University of Technology, A-1040-Vienna, AUSTRIA. gerhard.hobler@tuwien.ac.at
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Abstract

Application of focused ion beams (FIB) to circuit modification during design and debugging of integrated circuits is limited by the degradation of active devices due to beam induced crystal damage. In order to investigate FIB induced damage formation theoretically, we have extended our 1-D/2-D binary collision (BC) code IMSIL to allow surface movement due to sputtering. In contrast to other dynamic BC codes, the crystal structure of the target and damage generation during implantation may be taken into account. Using this tool we simulate the milling of trenches in the gate stack of MOSFETs and compare the results with transmission electron microscopy cross sections and charge pumping data. The simulations confirm that damage tails are generated that are a factor of two deeper at relevant defect concentrations than expected by conventional BC simulations. This result is shown to be due to recoil channeling in spite of the fact that a beam-induced surface amorphous layer is present throughout the implant. In addition, we discuss the accuracy of the experimental results and the simulations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 792: Symposium R – Radiation Effects and Ion Beam Processing of Materials , 2003 , R10.10
Copyright
Copyright © Materials Research Society 2004

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References

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