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Simulation and Electron Energy-Loss Spectroscopy of Electron Beam Induced Point Defect Agglomerations in Silicon

  • Nathan G. Stoddard (a1), Gerd Duscher (a1) (a2), Wolfgang Windl (a3) and George A. Rozgonyi (a1)

Abstract

Nitrogen doped silicon samples were irradiated with 200 kV electrons in a transmission electron microscope (TEM). The resulting room temperature point defect creation, bonding and segregation were studied by in situ conventional and Z Contrast TEM imaging and electron energy loss spectroscopy (EELS). Energy loss spectra from areas attributed to be rich in vacancies or silicon self-interstitials are found to be significantly different from the bulk in the near-edge structure of their Si-L2,3 edges. The experimental results are compared with ab initio density of states calculations for electronically excited atoms near relaxed point defect structures and plans are outlined to extend this technique to individual point defect characterization.

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Simulation and Electron Energy-Loss Spectroscopy of Electron Beam Induced Point Defect Agglomerations in Silicon

  • Nathan G. Stoddard (a1), Gerd Duscher (a1) (a2), Wolfgang Windl (a3) and George A. Rozgonyi (a1)

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