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Simple Plan View Specimen Preparation Technique For Tem Investigation Of Semiconductors and Metals

  • A. De Veirman (a1), J. Eysermans (a1), H. Bender (a2), J. Vanhellemont (a2) and J. Van Landuyt (a1)...


This paper discusses a rapid and simple specimen preparation technique which was originally developed for plan view TEM investigation of processed silicon, but which afterwards was modified for the study of GaAs, Al/Al2O3 and Silicon-On-Insulator (SOI) structures. The major advantage of this poor man's method is that no specialised nor expensive equipment is needed.

A second technique is also described which is used in the case of unseeded SOI structures where the analysis of the top silicon layer is important.



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8. De Veirman, A., Yallup, K., Van Landuyt, J., Maes, H.E. and Amelinckx, S., Proc. 5th Oxford Conf. Microsc. Semicond. Mater., to be published (1987).


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