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Simple Plan View Specimen Preparation Technique For Tem Investigation Of Semiconductors and Metals

  • A. De Veirman (a1), J. Eysermans (a1), H. Bender (a2), J. Vanhellemont (a2) and J. Van Landuyt (a1)...

Abstract

This paper discusses a rapid and simple specimen preparation technique which was originally developed for plan view TEM investigation of processed silicon, but which afterwards was modified for the study of GaAs, Al/Al2O3 and Silicon-On-Insulator (SOI) structures. The major advantage of this poor man's method is that no specialised nor expensive equipment is needed.

A second technique is also described which is used in the case of unseeded SOI structures where the analysis of the top silicon layer is important.

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1. Van Landuyt, J., Vanhellemont, J., Bender, H., Amelinckx, S., Proc.XIth Int. Cong. Electron Microsc., Kyoto, 1059 (1986)
2. Vanhellemont, J., Bender, H. and Claeys, C., Proc. Gadest II, ed. Richter, H., Institute Phys. Semicond., Frankfurt (Oder), 130 (1987)
3. Kolbesen, B.O., Mayer, K.R. and Schuh, G.E., J. Phys. E 8, 197 (1975)
4. Mahr von Staszewski, G., Micron, 7 207 (1978)
5. Goodhew, P.J., Specimen preparation for transmission electron microscopy of materials, (Oxford University Press, Royal Microscopical Society, 1984), p.14, p. 8.
6. Vanhellemont, J., Terryn, H., Van Landuyt, J. and Vereecken, J., Proc. XIth Int. Cong. Electron Microsc., Kyoto, 1069 (1986)
7. De Schoenmacker, D., Meuris, M., Van Rossum, M., Landuyt, J. Van, Maes, H., Proc. XIth Int. Cong. Electron Microsc., Kyoto, 1077 (1986).
8. De Veirman, A., Yallup, K., Van Landuyt, J., Maes, H.E. and Amelinckx, S., Proc. 5th Oxford Conf. Microsc. Semicond. Mater., to be published (1987).

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