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Silicon-Nickel Compounds by Ion Implantation

Published online by Cambridge University Press:  21 February 2011

S. G. B. Mayer ,
F. F. Milillo  and
D. I. Potter
S. G. B. Mayer
Affiliation:
Department of Metallurgy, Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06268
F. F. Milillo
Affiliation:
Department of Mechanical Engineering, Union College, Schenectady, New York 12308
D. I. Potter
Affiliation:
Department of Metallurgy, Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06268
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Abstract

Compounds of silicon and nickel have been formed by implanting silicon ions into nickel at various fluences and temperatures. Temperature during implantation is a major factor controlling implanted ion concentrations and phase developments. The ordered phase Ni3Si, which forms during implantation at 600°C, is replaced by Ni5Si2 during implantation at 400°C or below. In contrast to aluminum implantation of nickel, crystalline phases form even at high fluences (>1 × 1018 ions/cm2) and at low temperatures (<200°C) in silicon implanted nickel.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 39: Symposium G – High-Temperature Ordered Intermetallic Alloys I , 1984 , 521
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

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