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Silicon Nanoclusters in Si-SiO2 System

Published online by Cambridge University Press:  17 March 2011

F.J. Espinoza-Beltrán ,
L.L. Díaz-Flores ,
J.M. Yáñez-Limón ,
J. Morales-Hernández ,
F. Rodríguez-Melgarejo ,
Yuri Vorobiev  and
J. González-Hernández
F.J. Espinoza-Beltrán
Affiliation:
Centro de Investigación y de Estudios Avanzados del IPN, Unidad Querétaro. Libramiento Norponiente 2000, Fracc. Real de Juriquilla, Querétaro, Qro., México
L.L. Díaz-Flores
Affiliation:
Centro de Investigación y de Estudios Avanzados del IPN, Unidad Querétaro. Libramiento Norponiente 2000, Fracc. Real de Juriquilla, Querétaro, Qro., México
J.M. Yáñez-Limón
Affiliation:
Centro de Investigación y de Estudios Avanzados del IPN, Unidad Querétaro. Libramiento Norponiente 2000, Fracc. Real de Juriquilla, Querétaro, Qro., México
J. Morales-Hernández
Affiliation:
Programa de Posgrado de Ingeniería, Universidad Autónoma de Querétaro, México
F. Rodríguez-Melgarejo
Affiliation:
Centro de Investigación y de Estudios Avanzados del IPN, Unidad Querétaro. Libramiento Norponiente 2000, Fracc. Real de Juriquilla, Querétaro, Qro., México
Yuri Vorobiev
Affiliation:
Centro de Investigación y de Estudios Avanzados del IPN, Unidad Querétaro. Libramiento Norponiente 2000, Fracc. Real de Juriquilla, Querétaro, Qro., México
J. González-Hernández
Affiliation:
Centro de Investigación y de Estudios Avanzados del IPN, Unidad Querétaro. Libramiento Norponiente 2000, Fracc. Real de Juriquilla, Querétaro, Qro., México
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Abstract

Low concentration of Si nanoparticles (n-Si) produced by a ball milling method were introduced into a SiO2 matrix by the sol-gel method. These SiO2 sol-gel suspensions were prepared with high water-TEOS ratios. The samples obtained have high silanol concentration as was proved by infrared spectroscopy. The silanol structures of this samples are resistant for temperature as high as 800°C. Raman scattering measurements showed evidence of a photo-oxidation effect of the nSi particles embedded into the SiO2 matrix with high silanol concentration. The nanometric size of the Si particles was computed from Raman scattering measurements. The photo-oxidation effect was observed as a gradual shifting and broadening of the Raman signal due to the reduction of the particle size from 14 to 7 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F5.8.1
Copyright
Copyright © Materials Research Society 2001

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