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Silicon Nanoclusters in Si-SiO2 System

  • F.J. Espinoza-Beltrán (a1), L.L. Díaz-Flores (a1), J.M. Yáñez-Limón (a1), J. Morales-Hernández (a2), F. Rodríguez-Melgarejo (a1), Yuri Vorobiev (a1) and J. González-Hernández (a1)...

Abstract

Low concentration of Si nanoparticles (n-Si) produced by a ball milling method were introduced into a SiO2 matrix by the sol-gel method. These SiO2 sol-gel suspensions were prepared with high water-TEOS ratios. The samples obtained have high silanol concentration as was proved by infrared spectroscopy. The silanol structures of this samples are resistant for temperature as high as 800°C. Raman scattering measurements showed evidence of a photo-oxidation effect of the nSi particles embedded into the SiO2 matrix with high silanol concentration. The nanometric size of the Si particles was computed from Raman scattering measurements. The photo-oxidation effect was observed as a gradual shifting and broadening of the Raman signal due to the reduction of the particle size from 14 to 7 nm.

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Silicon Nanoclusters in Si-SiO2 System

  • F.J. Espinoza-Beltrán (a1), L.L. Díaz-Flores (a1), J.M. Yáñez-Limón (a1), J. Morales-Hernández (a2), F. Rodríguez-Melgarejo (a1), Yuri Vorobiev (a1) and J. González-Hernández (a1)...

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