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Silicon Light Emissions from Boron Implant-Induced Extended Defects

Published online by Cambridge University Press:  01 February 2011

G. Z. Pan
Affiliation:
Microfabrication Laboratory, University of California at Los Angeles, Los Angeles, CA 90095
R. P. Ostroumov
Affiliation:
Device Research Laboratory, and MARCO Focus Center on Functional Engineered Nano Architectonics-FENA, University of California at Los Angeles, Los Angeles, CA 90095
L. P. Ren
Affiliation:
Nanoelectronics and Nanophotonics Laboratory, Global Nanosystems, Inc., Los Angeles, CA 90025
Y. G. Lian
Affiliation:
Microfabrication Laboratory, University of California at Los Angeles, Los Angeles, CA 90095
K. L. Wang
Affiliation:
Device Research Laboratory, and MARCO Focus Center on Functional Engineered Nano Architectonics-FENA, University of California at Los Angeles, Los Angeles, CA 90095
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Abstract

We studied the electroluminescence (EL) of boron-implanted p-n junction Si LEDs in correlation with the implant-induced extended defects of different types. By varying the post implant annealing conditions to tune the extended defects and by using plan-view transmission electron microscopy to identify them, we found that {113} defects along Si<110> are the ones that result in strong silicon light emission of the p-n junction Si LEDs other than {111} perfect prismatic and {111} faulted Frank dislocation loops. The EL peak intensity at about 1.1 eV of {113} defect-engineered Si LEDs is about twenty-five times higher than that of dislocation defect-engineered Si LEDs. The EL measured at temperatures from room temperature to 4 K indicated that the emissions related to the extended defects are from silicon band edge radiative recombination.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

1 Kimerling, L.C., The Electrochemical Society Interface 9, 28 (2000).Google Scholar
2 Ball, P., Nature 409, 974 (2001).Google Scholar
3 Hirschamn, K.D., Tybekov, L., Duttagupta, S.P. and Fauchet, P.M., Nature 384, 338 (1996).Google Scholar
4 Zheng, B., Michel, J., Ren, F. Y., Kimerling, L. C., Jacobson, D. C., and Poate, J. M., Applied Physics Letters 64, 2842 (1994).Google Scholar
5 Leong, D., Harry, M., Reeson, K.J. and Homewood, K.P., Nature 387, 686 (1997).Google Scholar
6 Franzo, G., Priolo, F., Coffa, S., Polman, A. and Carnera, A., Appl. Phys. Lett. 64, 2235 (1994).Google Scholar
7 Ng, W. L., Lourenco, M. A., Gwilliam, R.M., Ledain, S., Shao, G., and Homewood, K. P., Nature 410, 192 (2001).Google Scholar
8 Lourenco, M. A., Siddiqui, M.S.A., et al, in Towards the First Silicon Laser, NATO Series, edited by Pavesi, L, Gaponenko, S and Dal Negro, L (Kluwer, New York, 2003), Vol. 93, pp.1120.Google Scholar
9 Pan, G.Z. and Tu, K.N., J. Appl. Phys. 82, 601 (1997); G.Z. Pan and K.N. Tu in Defects and Diffusion in Silicon Processing, edited by R. T. Diaz, S. Coffa, P. A. Stolk and C. S. Rafferty (Mater. Res. Soc. Proc. 469, Pittsburgh, PA, 1997), pp. 431-436.Google Scholar
10 Eaglesham, D. J., Stolk, P. A., Gossmann, H.-J., and Poate, J. M., Appl. Phys. Lett. 65, 2305 (1994).Google Scholar