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Silicon Light Emissions from Boron Implant-Induced Extended Defects

  • G. Z. Pan (a1), R. P. Ostroumov (a2), L. P. Ren (a3), Y. G. Lian (a1) and K. L. Wang (a2)...

Abstract

We studied the electroluminescence (EL) of boron-implanted p-n junction Si LEDs in correlation with the implant-induced extended defects of different types. By varying the post implant annealing conditions to tune the extended defects and by using plan-view transmission electron microscopy to identify them, we found that {113} defects along Si<110> are the ones that result in strong silicon light emission of the p-n junction Si LEDs other than {111} perfect prismatic and {111} faulted Frank dislocation loops. The EL peak intensity at about 1.1 eV of {113} defect-engineered Si LEDs is about twenty-five times higher than that of dislocation defect-engineered Si LEDs. The EL measured at temperatures from room temperature to 4 K indicated that the emissions related to the extended defects are from silicon band edge radiative recombination.

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Silicon Light Emissions from Boron Implant-Induced Extended Defects

  • G. Z. Pan (a1), R. P. Ostroumov (a2), L. P. Ren (a3), Y. G. Lian (a1) and K. L. Wang (a2)...

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