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Silicon Field Emission Arrays Coated with CoSi2 Layer Grown by Reactive Chemical Vapor Deposition

  • Byung Wook Han (a1), Hwa Sung Rhee (a1), Byung Tae Ahn (a1) and Nam Yang Lee (a2)

Abstract

We prepared Si emitters coated with an MOCVD CoSi2 layer to improve the emission properties. The CoSi2 layer was grown in situ by reactive chemical vapor deposition of cyclopentadienyl dicarbonyl cobalt at 650 °C. The CoSi2 layer was conformally coated on the Si emitter tips and had a twinned structure at the epitaxial CoSi2/Si interface. The CoSi2-coated Si emitters showed an enhanced emission due to the increase of the number of emitting site from Fowler-Nordheim plot. The fluctuation of emission current was reduced by CoSi2 coating. But the long-term stability was not much improved.

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Silicon Field Emission Arrays Coated with CoSi2 Layer Grown by Reactive Chemical Vapor Deposition

  • Byung Wook Han (a1), Hwa Sung Rhee (a1), Byung Tae Ahn (a1) and Nam Yang Lee (a2)

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