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Silicon Carbide Power Devices and Processing

Published online by Cambridge University Press:  01 February 2011

J.B. Casady ,
J.R. Bonds ,
W.A. Draper ,
J.N. Merrett ,
I. Sankin ,
D. Seale  and
M.S. Mazzola
J.B. Casady
Affiliation:
SiC Devices Group, Semi South Laboratories, Inc., One Research Blvd., Starkville, MS 39759, U.S.A.
J.R. Bonds
Affiliation:
SiC Devices Group, Semi South Laboratories, Inc., One Research Blvd., Starkville, MS 39759, U.S.A.
W.A. Draper
Affiliation:
SiC Devices Group, Semi South Laboratories, Inc., One Research Blvd., Starkville, MS 39759, U.S.A.
J.N. Merrett
Affiliation:
SiC Devices Group, Semi South Laboratories, Inc., One Research Blvd., Starkville, MS 39759, U.S.A.
I. Sankin
Affiliation:
SiC Devices Group, Semi South Laboratories, Inc., One Research Blvd., Starkville, MS 39759, U.S.A.
D. Seale
Affiliation:
ECE Department, Mississippi State University Mississippi State, MS 39762, U.S.A.
M.S. Mazzola
Affiliation:
ECE Department, Mississippi State University Mississippi State, MS 39762, U.S.A.
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Abstract

An overview of silicon carbide (SiC) power device technology is given with an emphasis on processing issues and commercial applications. Schottky Barrier Diodes (SBDs) were the first to be made commercially available in 2001, with power switch and RF amplifiers soon to follow. This paper discusses the performance of current available rectifiers and published power switch development and identifies key issues in processing and device structures which have influenced past and will impact future SiC product development.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C1.3
Copyright
Copyright © Materials Research Society 2003

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References

1. Cooper, J.A. Jr , and Agarwal, A., Proceedings of the IEEE, 90 (6), 956–968 (2002).Google Scholar
2. Singh, R., Cooper, J.A. Jr, Melloch, M.R., Chow, T.P., and Palmour, J.W., IEEE Transactions on Electron Devices, 49 (4), 665–672 (2002).Google Scholar
3. Elasser, A., Chow, T.P., Proceedings of the IEEE, 90 (6), 969–986 (2002).Google Scholar
4. Clarke, R.C., Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 124, 2001.Google Scholar
5. Morisette, D.T., Cooper, J.A. Jr , IEEE Transactions on Electron Devices, 49 (9), 1657–1664 (2002).Google Scholar
6. Sheridan, D.C., Niu, G., Merrett, J.N., Cressler, J.D., Dufrene, J.B., Casady, J.B., Sankin, I., Conference Proceedings - 13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01), Osaka, Japan, 191–194, 2001.Google Scholar
7. Sankin, I., Dufrene, J.B., Merrett, J.N., and Casady, J.B., Conference Proceedings European Conference on SiC and Related Materials (ECSCRM), Linkoping, Sweden, 2002.Google Scholar
8. Dufrene, J.B., Carter, G., Casady, J.B., Sankin, I., Sheridan, D.C., Draper, W., Mazzola, M.; IEEE Applied Power Electronics Conference and Exposition, 2, 1253–1257 (2001).Google Scholar
9. Larkin, D. J., Neudeck, P. G., Powell, J. A., and Matus, L. G., Institute of Physics Conference Series, no. 137, Silicon Carbide and Related Materials, Spencer, M. G., Devaty, R. P., Edmond, J. A., Khan, M. A., Kaplan, R., and Rahman, M., Eds. Bristol: IOP Publishing, 1994, pp. 51–54.Google Scholar
10. Bonds, J.R., M.S. Thesis, Mississippi State University, 2002.Google Scholar
11. Khan, F.A. and Adesida, I., Applied Physics Letters, 75 (15), 2268–2270 (1999).Google Scholar
12. Kim, Bum Seok, Jeong, Jae Kyeong, Um, Myung Yoon, Na, Hoon Joo, Song, In Bok, and Kim, Hyeong Joon, Materials Science Forum, 389-393, 953–956 (2002).Google Scholar
13. Cho, H., Leerungnawarat, P., Hays, D.C., and Pearton, S.J., Applied Physics Letters, 76 (5), 739–741 (2000).Google Scholar
14. Li, Binghui, Cao, Lihui, and Zhao, Jian H., Applied Physics Letters, 73 (5), 653–655 (1998).Google Scholar
15. Zhu, Lin and Chow, T. Paul, Materials Science Forum, 389-393, 1231–1234 (2002).Google Scholar
16. Koo, S.-M., Lee, S.-K., Zetterling, C.-M., Ostiling, M., Forsberg, U., and Janzen, E., Materials Science Forum, 389-393, 1235–1238 (2002).Google Scholar
17. Sankin, I., Casady, J.B., Dufrene, J.B., Draper, W.A., Kretchmer, J., Vandersand, J., Kumar, V., Mazzola, M.S., and Saddow, S.E., Solid-State Electronics, 45 (9), 1653–1657 (2001).Google Scholar
18. Kimoto, T., Itoh, A., Takemura, O., Kobayashi, S., Matsunami, H., 1996 Electronic Materials Conference, Santa Barbara, CA, 1996.Google Scholar
19. Bauer, A.J., Ranbach, M., Frey, L., Weiss, R., Rupp, R., Friedrichs, P., Peters, D., and Schorner, R., presented at the 2002 European Conference on Silicon Carbide and Related Materials, Linkoping, Sweden, 2002 (unpublished).Google Scholar
20. Izumi, S., Fujisawa, H., Tawara, T., Ueno, K., and Hiraoka, M., presentedat the2002 European Conference on Silicon Carbide and Related Materials, Linkoping, Sweden, 2002 (unpublished).Google Scholar
21. Senzaki, J., Kojima, K., Harada, S., Kosugi, R., Suzuki, S., Suzuki, T., and Fukuda, K., IEEE Electron Device Letters, 23 (1), 13–15 (2002).Google Scholar
22. Kosugi, R., Suzuki, S., Okamoto, M., Harada, S., Senzaki, J., and Fukuda, K., IEEE Electron Device Letters, 23 (3), 136–138 (2002).Google Scholar
23. Chung, G.Y., Tin, C. C., Williams, J.R., McDonald, K., Chanana, R.K.. Weller, R. A., Pantelides, S.T., Feldman, L. C., Holland, O.W., Das, M.K., and Palmour, J.W., IEEE Electron Device Letters, 22 (4), 176–178 (2001).Google Scholar
24. Fursin, L.G., Zhoa, J.H., and Weiner, M., IEEE Electronic Letters, 37 (17), 1092–1093 (2001).Google Scholar
25. Matsunami, H., Materials Science Forum, 389-393, 3–8 (2001).Google Scholar
26. Cole, M. W., Joshi, P.C., Hubbard, C.W., Wood, M.C., Ervin, M.H., and Geil, B., Journal of Applied Physics, 88 (5), 2652–2657 (2000).Google Scholar
27. Crofton, J., McMullin, P.G., Williams, J. R., and Bozack, M.J., Journal of Applied Physics, 1317–1319 (1995).Google Scholar
28. Odekrik, B., Caldus Semiconductor, Inc., (private communication).Google Scholar
29. Jang, T., Porter, L.M., Gutsch, G.W.M., Odekirk, B., Applied Physics Letters, 75 (25), 3956–3959 (date).Google Scholar
30. Mitlehner, H., Bartsch, W., Dohnke, K.O., Friedrichs, P., Kaltschmidt, R., Weiss, B., Stephani, D., Proceedings of the 11th International Symposium on Power Semiconductor Devices and IC's, 339–342, 1999.Google Scholar
31. Zhao, J., Tone, K., Alexandrov, P., Fursin, L., and Weiner, M., accepted for future publication in IEEE Electron Device Letters, 2003 (unpublished).Google Scholar
32. Huijie, Y., Lai, J., Li, X., Luo, Y., Fursin, L., Zhao, J.H., Alexandrov, P., Wright, B., and Weiner, M., 2002 Industry Applications Conference, 4, 2609–2613, 2002.Google Scholar
33. Tang, Y., Banerjee, S., and Chow, T.P., Proceedings of the 14th International Symposium on Power Semiconductor Devices and IC's, 53–56, 2002.Google Scholar
34. Agarwal, A., Ryu, S., Palmour, J., presented at the 2003 ISPSD Conference, Cambridge, England, 2003 (unpublished).Google Scholar
35. Agarwal, A. K., Casady, J.B., Rowland, L.B., Valek, W.F., White, M.H., and Brandt, C.D., IEEE Electron Device Letters, 18 (12), 586–588 (1997).Google Scholar
36. Ryu, S., Agarwal, A., Richmond, J., Palmour, J., Saks, N., and Williams, J., IEEE Electron Device Letters, 23 (6), 321–323 (2002).Google Scholar
37. Schorner, R., Friedrichs, P., Peters, D., Mitlehner, H., Weis, B., and Stephani, D., Materials Science Forum, 348-352, 1295–1298 (2000).Google Scholar
38. Tan, J., Cooper, J.A. Jr , and Melloch, M.R., IEEE Electron Device Letters, 19, 487–489 (1998).Google Scholar