Hostname: page-component-77c89778f8-m42fx Total loading time: 0 Render date: 2024-07-17T10:59:48.895Z Has data issue: false hasContentIssue false
  • English
  • Français

Silicon Carbide Epitaxial Layers Grown ON SiC Wafers With Reduced Micropipe Density

Published online by Cambridge University Press:  10 February 2011

S. Rendakova ,
N. Kuznetsov ,
N. Savkina ,
M. Rastegaeva ,
A. Andreev ,
M. Minbaeva ,
A. Morozov  and
V. Dmitriev
S. Rendakova
Affiliation:
loffe Institute, St. Petersburg, 194021 Russia Crystal Growth Research Center, St. Petersburg, 194021, Russia
N. Kuznetsov
Affiliation:
loffe Institute, St. Petersburg, 194021 Russia
N. Savkina
Affiliation:
loffe Institute, St. Petersburg, 194021 Russia
M. Rastegaeva
Affiliation:
loffe Institute, St. Petersburg, 194021 Russia
A. Andreev
Affiliation:
loffe Institute, St. Petersburg, 194021 Russia
M. Minbaeva
Affiliation:
loffe Institute, St. Petersburg, 194021 Russia
A. Morozov
Affiliation:
Crystal Growth Research Center, St. Petersburg, 194021, Russia
V. Dmitriev
Affiliation:
loffe Institute, St. Petersburg, 194021 Russia MSRCE, Howard University, Washington, DC, 20059 USA TDI, Inc., Gaithersburg, MD, 20877 USA vladimit@tdii.com
Get access

Abstract

The characteristics of SiC high-power devices are currently limited by the small area of the devices, which is usually less than 1 sq. mm. In order to increase device area, defect density in SiC epitaxial structures must be reduced. In this paper, we describe properties of silicon carbide epitaxial layers grown on 4H-SiC wafers with reduced micropipe density. These layers were grown by the vacuum sublimation method. Large area Schottky barriers (up to 8 mm2) were fabricated on SiC epitaxial layers and characterized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 131
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Neudeck, P.G., Huang, W., and Dudley, M., in Power Semiconductor Materials and Devices, edited by Pearton, J., Shul, R.J., Wolfgang, E., Ren, F., Tenconi, S. (Mat. Res. Soc. Symp. Proc. 483, Pittsburgh, PA 1998), p. 285–294.Google Scholar
2 Chelnokov, V.E., Syrkin, A.L., Dmitriev, V.A., Diamond and Related Materials 6 (1997) 1480–1484.Google Scholar
3 Casady, J.B., Agarwal, A.K., Rowland, L.B., Seshadri, S., Siergiej, R.R., Mani, S.S., Sheridan, D.C., Sanger, P.A., and Brandt, C.D., in Power Semiconductor Materials and Devices, edited by Pearton, S.J., Shul, R.J., Wolfgang, E., Ren, F., Tenconi, S. (Mat. Res. Soc. Symp. Proc. 483, Pittsburgh, PA 1998), p. 27–38.Google Scholar
4 Cooper, J.A. Jr., Melloch, M.R., Woodall, J.M., Spitz, J., Schoen, K.J. and Henning, J.P., in: Materials Science Forum Vols. 264–268 (Trans Tech Publications, Switzerland, 1998) pp. 895–900.Google Scholar
5 Powell, J.A., Larkin, D.J., Neudeck, P.G., Yang, J.W., and Pirouz, P., in1994 Silicon Carbide and Related Materials, Inst. Phys. Conf. Ser. N 137 (IOP Publ. Ltd., Bristol, 1994) pp. 161–164.Google Scholar
6 Tsvetkov, V.F., Allen, S.T., Kong, H.S. and Carter, C.H. Jr., in: Silicon Carbide and Related Materials, Inst. Phys. Conf. Ser. N 142 edited by Nakashima, S., Matsunami, H., Yosida, S. and Harima, H. (IOP Publishing Ltd. 1996) pp. 17–22.Google Scholar
7 Technologies and Devices International, Inc., Gaithersburg, MD 20877 (http://www.tdii.com.).Google Scholar
8 Rendakova, S., Ivantsov, V. and Dmitriev, V., in: Materials Science Forum Vols. 264–268, edited by Pensl, G., Morkoc, H., Monemar, B. and Janzen, E. (Trans Tech Publications, Switzerland, 1998) pp. 163–166.Google Scholar
9 Dmitriev, V.A., SiC Wafers with Reduced Micropipe Density (0 – 15 cm−2), presented at the DARPA Silicon Carbide (SiC) High-Power Electronics Materials Program Review, November 3, 1997, Arlington, VA.Google Scholar