Skip to main content Accessibility help

Silicon and Nitrogen Dangling Bonds Point Defects in PECVD Silicon Oxynitrides Thin Layers

  • S. Viscaino (a1), Y. Cros (a1) and B. Ruf (a1)


New defects were revealed in PECVD SiOxNyHz thin layers upon VUV-illuminations with a deuterium (De) lamp. The ESR signal measured after a 8-hour illumination reached a saturated amplitude one or two decades higher than the dark ESR signal. The dark ESR signal level was recovered after a 3-hour anneal at 380°C. In addition to the silicon dangling bonds already identified in the dark ESR, the bridging nitrogen dangling bonds and over-coordinated nitrogen were identified after VUV-radiations. The relative densities of the various kinds of defect are given as a function of the O/O+N oxynitride composition.



Hide All
1 Kumeda, M., Yokomichi, H. and Shimizu, T., J. Appl. Phys. 23, L502 (1984)
2 Krick, D.T., Lenahan, P.M. and Kanicki, J., Appl. Phys. Lett. 51, 608 (1987)
3. Krick, D.T., Lenahan, P.M. and Kanicki, J., J. Appl. Phys. 64, 3558 (1988).
4. Lenahan, P.M., Krick, D.T. and Kanicki, J., Appl. Surface Science 39, 392 (1989)
5. Warren, W.L., Lenahan, P.M. and Curry, S.E., Phys. Rev. Lett. 65, 207 (1990)
6. Kanicki, J., Sankaran, M., Gelatos, A., Crowder, M. S. and Tober, E. D., App. Phys. Lett. 57, 698 (1990).
7. Crowder, M.S., Tober, E.D. and Kanicki, J., Appl. Phys. Lett. 57 1995 (1990).
8. Poolton, N.R.J. and Cros, Y., J. Phys. France, 1335 (1991)
9. Warren, W.L., Rong, F. C., Poindexter, E.H., Gerardi, G.J. and Kanicki, J., J. Appl. Phys. 70, 346 (1991).
10. Warren, W.L., Kanicki, J., Robenson, J. and Lenahan, P.M., App. Phys. Lett. 59, 1699 (1991).
11. Tober, E.D., Kanicki, J. and Crowder, M.S., Appl. Phys. Lett. 59, 1723 (1991).
12. Griscom, D.L., Phys. Rev. B 22, 4192 (1980)
13. Stathis, J.H. and Kastner, M.A., Phys. Rev. B, 29, 7079 (1984)
14. Stathis, J.H. and Kastner, M.A., J. of Non-Cryst. Sol. 77&78, 739 (1985)
15. Witham, H.S. and Lenahan, P.M., Appl. Phys. Lett. 51, 1007 (1987)
16. Devine, R.A.B. and Francou, J.-M., Phys. Rev. B 41, 12882 (1990)
17. Lenahan, P.M., Warren, W.L., Krick, D.T., Dressendorfer, P.V. and Triplett, B.B., J. Appl. Phys. 67, 7612 (1990)
18. Devine, R.A.B., J. Appl. Phys. 70, 3542 (1991)
19. Warren, W.L., Poindexter, E.H., Offenberg, M. and Müller-Warmuth, W., J. Electrochem. Soc. 139, 872 (1992)
20. Yount, J.T., Kraus, G.T., Lenahan, P.M. and Krick, D.T., J. Appl. Phys. 70, 4969 (1991).
21. Cros, Y., Viscaino, S., Arnold Bik, W.M. and Habraken, F.H.P.M., to be published in J. Appl. Phys.
22. Ance, C., de Chelle, F., Ferraton, J.P., Leveque, G., Ordejón, P. and Ynduráin, F., Appl. Phys. Lett. 60 (11), 1399 (1992).
23. Viscaino, S., phD thesis, University Joseph Fourier — Grenoble I, Oct 1992.
24. Krautwurm, J., LEPES, private communication.
25. Griscom, D.L., J. of Non-Cryst Sol. 31, 241 (1978).
26. Tsai, T.E., Griscom, D.L. and Friebele, E.J., Phys. Rev. B 38 (3), 2140 (1988).
27. Griscom, D.L., Friebele, E.J., Sigel, G.H., Solid State Commun. 15, 479 (1974).
28. Jousse, D., Kanicki, J., Batey, J. and Cros, Y., Proc. SPIE vol 946 Spectroscopic Characterization Techniques for Semiconductor Technology III, 227 (1988).
29. Hirao, T., Setsune, K., Kitagawa, M., Kamada, T., Ohmura, T., Wasa, K. and Izumi, T., Jap. J. of Appl. Phys. 27 (1), L21 (1988).
30. Kubler, L., Haug, R., Ringeisen, F. and Jaegle, A., J. Non-Cryst. Sol. 54, 27 (1983).
31. Brower, K.L., Phys. Rev. Lett. 44 (24), 1627 (1980).

Silicon and Nitrogen Dangling Bonds Point Defects in PECVD Silicon Oxynitrides Thin Layers

  • S. Viscaino (a1), Y. Cros (a1) and B. Ruf (a1)


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed