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Silicide Formation with Tungsten Deposited from W-LPCVD; The Role of Back Surface Conditions

Published online by Cambridge University Press:  25 February 2011

S. -L. Zhang ,
M. Östling ,
U. Smith  and
R. Buchta
S. -L. Zhang
Affiliation:
Swedish Institute of Microelectronics, P. O. Box 1084, S-164 21 Kista
M. Östling
Affiliation:
Royal Institute of Technology-Electrum, Solid State Electronics, P.O. Box 1298, S-164 28 Kista
U. Smith
Affiliation:
Ericsson Components AB, S-164 81 Kista, Sweden
R. Buchta
Affiliation:
Swedish Institute of Microelectronics, P. O. Box 1084, S-164 21 Kista
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Extract

Tungsten (W) films were deposited on the front surface of float-zone (FZ) Si wafers, from tungsten hexafluoride (WF6) by low pressure chemical vapor deposition (LPCVD). The back surface conditions of the Si wafers was the major concern of this study. Various back surface coatings were investigated, tungsten, thermal SiO2 and LPCVD-Si3N4. Isothermal heat treatments were performed in an argon flow furnace at 760°C for 8 to 30 min. The silicide formation was monitored by Rutherford backscattering spectrometry (RBS). No difference in the silicidation rate was found on the wafers with a back surface oxide layer as compared to that of the reference wafers with no back surface coating. However, for wafers with the back surface covered with Si3N4 or W, a retarded silicidation rate was observed. This phenomenon appeared to be insensitive to the presence of a cap layer (PECVD-SiO2) on the W films before annealing. A model including the behavior of point defects is proposed to provide an explanation to this observation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 79
Copyright
Copyright © Materials Research Society 1992

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References

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