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Silicide Formation at HfO2/Si and ZrO2/Si Interfaces Induced by Ar+ Ion Bombardment

Published online by Cambridge University Press:  01 February 2011

Yu. Lebedinskii ,
A. Zenkevich ,
D. Filatov ,
D. Antonov ,
J. Gushina  and
G. Maximov
Yu. Lebedinskii
Affiliation:
Moscow Engineering Physics Institute, 115409 Moscow, Russia
A. Zenkevich
Affiliation:
Moscow Engineering Physics Institute, 115409 Moscow, Russia
D. Filatov
Affiliation:
University of Nizhny Novgorod, 603950 Nizhny Novgorod, Russia
D. Antonov
Affiliation:
University of Nizhny Novgorod, 603950 Nizhny Novgorod, Russia
J. Gushina
Affiliation:
University of Nizhny Novgorod, 603950 Nizhny Novgorod, Russia
G. Maximov
Affiliation:
University of Nizhny Novgorod, 603950 Nizhny Novgorod, Russia
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Abstract

The effect of ion bombardment with Ar+ at the energy E=2.5 keV on HfO2/Si and ZrO2/Si interfaces has been investigated in situ with XPS by growing thin metal oxide layers and further ion etching them. It is shown that a silicide layer ∼2 nm in thickness is forming, and Ar+ ion beam affects MeO2/Si (Me=Hf, Zr) interface at thickness ≤3 nm. Ex situ AFM/STM corroborates the formation of silicide layer at metal oxide/silicon interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 786: Symposium E – Fundamentals of Novel Oxide/Semiconductor Interfaces , 2003 , E3.25
Copyright
Copyright © Materials Research Society 2004

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References

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