Hostname: page-component-848d4c4894-4rdrl Total loading time: 0 Render date: 2024-07-03T08:12:54.700Z Has data issue: false hasContentIssue false
  • English
  • Français

Silane Adsorption and Decomposition on Si(111)-(7×17)

Published online by Cambridge University Press:  25 February 2011

S. M. Gates ,
C. M. Greenlief  and
D. B. Beach
S. M. Gates
Affiliation:
I.B.M. T.J. Watson Research Center, Yorktown Heights, N.Y. 10598.
C. M. Greenlief
Affiliation:
I.B.M. T.J. Watson Research Center, Yorktown Heights, N.Y. 10598.
D. B. Beach
Affiliation:
I.B.M. T.J. Watson Research Center, Yorktown Heights, N.Y. 10598.
Get access

Abstract

The reactive sticking coefficient, SR, of SiH4 on the Si(111)-(7×7) surface has been studied as a function of hydrogen coverage (ΘH) in the surface temperature (TS) range 80–500°C. At 400°C, evidence is seen for two adsorption regimes which are proposed to correspond to minority and majority surface sites. On the minority sites (ΘH = 0 to 0.08), SR is approximately independent of TS. On the majority sites (ΘH > 0.08), SR is a complicated function of TS and ΘH. After SiH4 exposure, surface SiH is the dominant stable decomposition intermediate from 80 to 500°C, with detectable populations of SiH2 and SiH3 present at the lowest temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 179
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Buss, R.J., Ho, P., Breiland, W.G. and Coltrin, M.E.; J. Appl. Phys. 63 2808 (1988).Google Scholar
2. Schulze, G. and Henzler, M.; Surface Science 124 336 (1983).CrossRefGoogle Scholar
3. Koehler, B.G., Mak, C.H., Arthur, D.A., Coon, P.A. and George, S.M.; J. Chem. Phys. 89 1709 (1988).Google Scholar
4. Gupta, P., Colvin, V.L. and George, S.M.; Phys. Rev. B37 8234 (1988).Google Scholar
5. Greenlief, C.M., Gates, S.M. and Holbert, P.A.; J. Vac. Sci. Tech., submitted.Google Scholar
6. Greenlief, C.M., Gates, S.M. and Holbert, P.A.; Phys. Rev. Lett., submitted.Google Scholar
7. Gates, S.M.; Surface Science 195 307 (1988).CrossRefGoogle Scholar
8. Gates, S.M., Greenlief, C.M., Beach, D.B. and Kunz, R.R.; Chem. Phys. Lett., submitted.Google Scholar
9. A bulk terminated (111) plane with 7.8×1014 Si cm.−2is used as the reference to report Θ in H or SiH4 per 1st layer Si atom.Google Scholar
10. Takayanagi, K., Tanishiro, Y., Takahashi, M., and Takahashi, S.; J. Vac. Sci. Tech. A3 1502 (1985).Google Scholar