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SiGe Heterojunctions Transistors and Optoelectronic Devices

Published online by Cambridge University Press:  25 February 2011

Maurizio Arienzo ,
James H. Comfort ,
Emmanuel F. Crabbe ,
David L. Harame ,
Subramanian S. Iyer ,
Vijay P. Kesan ,
Bernard S. Meyerson ,
Gary L. Patton ,
Johannes M.C. Stork  and
Yuan-Chen Sun
Maurizio Arienzo
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
James H. Comfort
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
Emmanuel F. Crabbe
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
David L. Harame
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
Subramanian S. Iyer
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
Vijay P. Kesan
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
Bernard S. Meyerson
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
Gary L. Patton
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
Johannes M.C. Stork
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
Yuan-Chen Sun
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
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Abstract

SiGe alloys have been successfully applied to a number of semiconductor devices, including bipolar heterojunction transistors, field effect transistors (FET's), and optoelectronic devices and structures. This review paper will first summarize the results obtained to-date in bipolar transistors, highlighting the design flexibility and the trade-offs offered by SiGe heterojunction technology and bandgap engineering, like junction field/capacitance control, liquid nitrogen operation and complementary processes. The leverage of this technology in high speed circuits will be discussed, including the record 75 GHz fr and 60 GHz fmax heterojunction bipolar transistors, the achievement of sub-25 ps ECL ring oscillator delay, and the doubling of the mobility in p-MODFETs. The applications of this technology to optoelectronic devices, including detectors and waveguides, will also be reviewed, to extend the use of silicon technology to long wavelength communication technology and infrared imaging.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 401
Copyright
Copyright © Materials Research Society 1993

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References

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