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SiC Multilayered Photoreceptor for Electrophotography

Published online by Cambridge University Press:  25 February 2011

Y. Nakayama ,
S. Akita ,
H. Itoh ,
T. Yajima ,
M. Nakano  and
T. Kawamura
Y. Nakayama
Affiliation:
Electrical Engineering, College of Engineering, University of Osaka Prefecture, Mozu-Umemachi, Sakai, Osaka 591
S. Akita
Affiliation:
Electrical Engineering, College of Engineering, University of Osaka Prefecture, Mozu-Umemachi, Sakai, Osaka 591
H. Itoh
Affiliation:
Kyocera Corporation, Yohkaichi, Shiga 527, Japan
T. Yajima
Affiliation:
Electrical Engineering, College of Engineering, University of Osaka Prefecture, Mozu-Umemachi, Sakai, Osaka 591
M. Nakano
Affiliation:
Electrical Engineering, College of Engineering, University of Osaka Prefecture, Mozu-Umemachi, Sakai, Osaka 591
T. Kawamura
Affiliation:
Electrical Engineering, College of Engineering, University of Osaka Prefecture, Mozu-Umemachi, Sakai, Osaka 591
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Abstract

New multilayered photoreceptor consisting of all layers of a-Si1−xCx:H (x=0.1−0.8) has been developed on the basis of a high rate deposition process established using a glow discharge in a mixture of SiH4 and C2H2. This SiC photoreceptor is for negative charging and shows the excellent spectral sensitivity that is high in a short wavelength region and is reduced at the wavelengths longer than 600nm, suitable for the plain paper copier. The charge acceptance more than 40V/μn is achieved for the thickness less than 20μm. The charging characteristics are discussed in terms of deep emission states in the a-SiC:H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 643
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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