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SiC Multilayered Photoreceptor for Electrophotography

  • Y. Nakayama (a1), S. Akita (a1), H. Itoh (a2), T. Yajima (a1), M. Nakano (a1) and T. Kawamura (a1)...

Abstract

New multilayered photoreceptor consisting of all layers of a-Si1−xCx:H (x=0.1−0.8) has been developed on the basis of a high rate deposition process established using a glow discharge in a mixture of SiH4 and C2H2. This SiC photoreceptor is for negative charging and shows the excellent spectral sensitivity that is high in a short wavelength region and is reduced at the wavelengths longer than 600nm, suitable for the plain paper copier. The charge acceptance more than 40V/μn is achieved for the thickness less than 20μm. The charging characteristics are discussed in terms of deep emission states in the a-SiC:H.

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1) Itoh, H., Takemura, H., Sasaki, T., Miyamoto, N., Higuchi, H., Ishibitsu, K. and Kawamura, T., Mat. Res. Soc. Symp. Proc. 118, 417 (1988).
2) Nakayama, Y., Yamamoto, N. and Kawamura, T., Proc. U.S.-Japan Joint Seminar on Technological Applications of Tetrahedral Amorphous Solids, Palo Alto, July 19−23, 1982.
3) Kudoh, M., Nakano, M., Nakayama, Y. and Kawamura, T., Proc. the SID 28, 75 (1987)
4) Nakayama, Y., Akita, S., Wakita, K. and kawamura, T., Mat. Res. Soc. Symp. Proc. 118, 73 (1988).
5) Nakayama, Y., Akita, S., Takemura, H., Wakita, K. and Kawamura, T., Mat. Res. Soc. Symp. Proc. 118, 423 (1988).
6) Abkowitz, M. and Maitra, S., J. Appl. Phys. 61, 1038 (1987).
7) Nakayama, Y., Akita, S. and Kawamura, T., Jpn. J. Appl. Phys. 27, L320 (1988).
8) Nakayama, Y., Kita, H., Takahashi, T., Akita, S. and Kawamura, T., J. Non-Cryst. Solids 97&98, 743 (1987).

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