Article contents
SiC Film Deposited by Pulsed Excimer Laser Ablation
Published online by Cambridge University Press: 16 February 2011
Abstract
Thin films of β- SiC were grown on Si substrates by excimer laser pulse ablation of bulk SiC. The films were examined by Auger electron, X-ray, and photoelectron spectroscopies. The film was smooth as monitored by scanning electron microscopy. Scanning electron and scanning tunneling microscopy showed inclusions in the deposited SiC film and laser ionization mass analysis detected SiC dimers in the vapor plume emitted from the target.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1990
References
REFERENCES
- 5
- Cited by