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Shape Transition of InAs Islands on InP (111)A

Published online by Cambridge University Press:  10 February 2011

Hanxuan Li ,
Theda Daniels-Race  and
Mohamed-Ali Hasan
Hanxuan Li
Affiliation:
Department of Electrical & Computer Engineering, Duke University, Durham, NC27708-0291
Theda Daniels-Race
Affiliation:
Department of Electrical & Computer Engineering, Duke University, Durham, NC27708-0291
Mohamed-Ali Hasan
Affiliation:
Department of Electrical & Computer Engineering, The University of North Carolina, Charlotte, NC 28223
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Abstract

Atomic force microscopy (AFM) reveals that InAs islands grown on InP (111)A, as they grow in size, undergo a shape transition. Below a critical size of around 30 nm, round-shaped quantum dots form, while above this size they grow in the shape of triangles, reflecting the symmetry of the (111) substrates. The edges of triangular islands are aligned along the three equivalent {110} directions of the InP (111) surface. The triangular islands grow laterally much faster than vertically, indicating the aspect ratio decrease of the islands with increasing InAs coverage. Our results provide a better understanding of the self-organization behaviors of InAs on InP (111)A.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 618: Symposium K – Morphological & Compositional Evolution of Heteroepitaxial… , 2000 , 109
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1 Daruka, I., Tersoff, J., and Barabashi, A.-L., Phys. Rev. Lett. 82, p. 2,753 (1999).Google Scholar
2 Georgsson, K., Carlsson, N., Samuelson, L., and Seifert, W., and Wallenberg, L. R., Appl. Phys. Lett. 67, p. 2,981 (1995).Google Scholar
3 Jacobsen, J., Jacobsen, K. W., Stoltze, P., and Nørskov, J. K., Phys. Rev. Lett. 74, p. 2,295 (1995).Google Scholar
4 Norman, A. G., Ahrenkiel, S. P., Moutinho, H., and Al-Jassim, M. M., Appl. Phys. Lett. 73, p. 1,844 (1998).Google Scholar
5 Li, H., Wu, J., Wang, Z. and Daniels-Race, T., Appl. Phys. Lett. 75, p. 1,173 (1999).Google Scholar
6 Yoon, S., Moon, Y., Lee, T., Yoon, E., and Kim, Y. D., Appl. Phys. Lett. 74, p. 2,029 (1999).Google Scholar
7 Lobo, C. and Leon, R., J. Phys. Lett. 83, p. 4,168 (1998).Google Scholar
8 Brune, Marald, Romainczyk, C., Roder, M. & Kern, K., Nature 369, p. 469 (1994).Google Scholar
9 Springholz, G., Holy, V., Pinczolits, M., and Bauer, G., Science 282, p. 734 (1998).Google Scholar
10 Guha, S., Madhukar, A., and Rajkumar, K. C., Appl. Phys. Lett. 57, p. 2,110 (1990).Google Scholar
11 Orr, B. G., Kessler, D., Snyder, C. W., and Sander, L., Europhys. Lett. 19, p. 33 (1992).Google Scholar
12 Ratsch, C. and Zangwill, A., Surf. Sci. 293, p. 123 (1993).Google Scholar
13 Drucker, J.,Phys. Rev. B 48, p. 18,203 (1993)Google Scholar
14 Medeiros-Ribeiro, G. et al. , Science 279, p. 353 (1998);Google Scholar