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Shape Reversal of Ge/Si Domes to Pyramids Via Si-Ge Intermixing and Strain Reduction

  • William L. Henstrom (a1), Chuan-Pu Liu (a1) and J. Murray Gibson (a2)

Abstract

At 650°C, Si freely intermixes with Ge in the dome islands causing a reduction in the strain of the islands and an increase in island size. The shape reversal of Ge/Si domes to pyramids is investigated by analysis of the strain and size changes that occur on an island by island basis. This was carried out for anneal times of 0, 20, 40 and 60 minutes. Transition islands were observed consistent with previous work[1], which are partially domes and partially pyramids. These islands demonstrated a strain gradient, having a slightly lower strain on the side that has transformed to a pyramid. Cross-sectional STEM was then used to show that this strain gradient is associated with a non-uniform Si intermixing in the islands.

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[2] Floro, J.A., Chason, E., and Lee, S.R.. edited by Pang, S.W. Diagnostic Techniques for Semiconductor Materials Processing H. (Mater. Res. Soc., Pittsburgh, PA, 1996) pp. 4 9 1–6. USA.
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[4] Miller, P.D., Chuan-Pu, Liu, and Gibson, J.M., submitted to Ultramicroscopy.
[5] Miller, P.D., Liu, C.-P., Henstrom, W.L., Gibson, J.M., Huang, Y., Zhang, P., Kamins, T.I., Basile, D. P., and Williams, R. Stanley, Appl. Phys. Lett. 75, 46(1999).
[6] Liu, C.-P., Miller, P.D., Henstrom, W.L. and Gibson, J.M., Presented at MRS Spring Meeting, San Francisco, 49 April, to be published in MRS proceeding (1999).
[7] Hirsch, P.B., Howie, A., Nicholson, R.B., Pashley, D.W., and Whelan, M.J., Electron Microscopy of Thin Crystals, (Butterworths, London, 1965), p. 206.
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[10] Liu, C.-P., Miller, P.D., Henstrom, W.L., and Gibson, J.M., submitted to J. Microscopy.
[11] Ludwig Reimer, Transmission Electron Microscopy: Physics of Image Formation and Microanalysis, 3rd ed. (Springer-Verlag, Berlin, 1993) pp. 138, 204–205.
[12] Liu, C.-P., Henstrom, W.L., and Gibson, J.M., Presented at MRS Fall Meeting, Boston, 28 November-3 December, to be published in MRS proceeding (1999).
[13] Henstrom, W.L., Liu, C.-P., Gibson, J.M., Kamins, T.I., and Williams, R.S., in preparation.

Shape Reversal of Ge/Si Domes to Pyramids Via Si-Ge Intermixing and Strain Reduction

  • William L. Henstrom (a1), Chuan-Pu Liu (a1) and J. Murray Gibson (a2)

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